双电源转换收发器；开漏；方向自动感测

NTS0104-Q100是具有方向自动感测能力、支持双向电压电平转换的4位双电源转换收发器。它具有两个4位输入-输出端口（An和Bn）、一个输出使能输入(OE)和两个电源引脚（VCC(A)和VCC(B)）。VCC(A)可由1.65 V至3.6 V之间的任何电压供电，VCC(B)可由2.3 V至5.5 V之间的任何电压供电。该电压范围使此器件适合于任何低电压节点（1.8 V、2.5 V、3.3 V和5.0 V）之间的转换。引脚An和OE以VCC(A)为基准，引脚Bn以VCC(B)为基准。引脚OE为低电平时会使输出呈高阻抗关断状态。此器件完全针对使用IOFF的部分掉电应用设计。IOFF电路会在器件 通过AEC-Q100（1级）认证的汽车级产品额定温度范围：-40 °C至+85 °C和-40 °C至+125 °C\n\n宽电源电压范围：VCC(A)：1.65 V至3.6 V和VCC(B)：2.3 V至5.5 V\n\n最大数据速率：推挽：50 Mbps\n\nIOFF电路提供部分掉电模式操作\n输入接受最高为5.5 V的电压\nESD保护：MIL-STD-883，方法3015 2类超过2500 V（端口A）\nMIL-STD-883，方法3015 3B类超过15000 V（端口B）\nHBM JESD22-A114E 2类超过2500 V（端口A）\nHBM JESD22-A114E 3B;

恩XP

Dual supply translating transceiver; open drain; auto direction sensing

文件：386.66 Kbytes 页数：21 Pages

恩XP

N-Channel Enhancement-Mode Vertical DMOS FETs

Low Threshold DMOS Technology These low threshold enhancement-mode (normally-off) transistors utilize a vertical DMOS structure and Supertex’s well-proven silicon-gate manufacturing process. This combination produces devices with the power handling capabilities of bipolar transistors and with the

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SUTEX

N-Channel Enhancement-Mode Vertical DMOS FET

Advanced DMOS Technology These enhancement-mode (normally-off) transistors utilize a vertical DMOS structure and Supertex’s well-proven silicon-gate manufacturing process. This combination produces devices with the power handling capabilities of bipolar transistors and with the high input impedan

文件：476.38 Kbytes 页数：4 Pages

SUTEX

P-Channel Enhancement-Mode Vertical DMOS FETs

Advanced DMOS Technology These enhancement-mode (normally-off) transistors utilize a vertical DMOS structure and Supertex’s well-proven silicon-gate manufacturing process. This combination produces devices with the power handling capabilities of bipolar transistors and with the high input impedan

文件：46.74 Kbytes 页数：4 Pages

SUTEX