Small Signal MOSFET 30 V, 0.56 A, Single N?묬hannel, SOT??3

Small Signal MOSFET 30 V, 0.56 A, Single N−Channel, SOT−23 Features • Low Gate Voltage Threshold (VGS(TH)) to Facilitate Drive Circuit Design • Low Gate Charge for Fast Switching • ESD Protected Gate • SOT−23 Package Provides Excellent Thermal Performance • Minimum Breakdown Voltage Ratin

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安森美半导体

Small Signal MOSFET 30 V, 0.56 A, Single N?묬hannel, SOT??3

Small Signal MOSFET 30 V, 0.56 A, Single N−Channel, SOT−23 Features • Low Gate Voltage Threshold (VGS(TH)) to Facilitate Drive Circuit Design • Low Gate Charge for Fast Switching • ESD Protected Gate • SOT−23 Package Provides Excellent Thermal Performance • Minimum Breakdown Voltage Ratin

文件：105.87 Kbytes 页数：5 Pages

ONSEMI

安森美半导体

N-Channel 30-V (D-S) MOSFET

FEATURES • Halogen-free According to IEC 61249-2-21 Definition • TrenchFET® Power MOSFET • 100 Rg Tested • Compliant to RoHS Directive 2002/95/EC APPLICATIONS • DC/DC Converter

文件：486.88 Kbytes 页数：9 Pages

VBSEMI

微碧半导体

30V N-Channel MOSFET

Product Summary * On-State Resistance: Ros(on)=1.50 @VGs =4.5V * Driving Voltage: 2.5Vq * Environmentally Friendly: EU RoHS Compliant, Pb Free

文件：1.62924 Mbytes 页数：5 Pages

TECHPUBLIC

台舟电子

Small Signal MOSFET

文件：90.54 Kbytes 页数：5 Pages

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安森美半导体