Power MOSFET 80 V, 22A, 29mΩ Single N-Channel

Industrial Power MOSFET in a 5x6mm LFPAK package designed for compact and efficient designs and including high thermal performance. • Low RDS-on\n• Reduced Qg and Qoss\n• Logic Level Capable\n• RDS-on rated at 4.5V VGS\n;

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MOSFET - Power, Single N-Channel 80 V, 29 m, 22 A

文件：279.12 Kbytes 页数：7 Pages

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安森美半导体

MOSFET - Power, Single N-Channel 80 V, 29 m, 22 A

文件：279.12 Kbytes 页数：7 Pages

ONSEMI

安森美半导体

MOSFET - Power, Single N-Channel 80 V, 29 m, 22 A

Features • Small Footprint (5x6 mm) for Compact Design • Low RDS(on) to Minimize Conduction Losses • Low QG and Capacitance to Minimize Driver Losses • LFPAK4 Package, Industry Standard • AEC−Q101 Qualified and PPAP Capable • These Devices are Pb−Free and are RoHS Compliant

文件：279.61 Kbytes 页数：7 Pages

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安森美半导体