首页>NTMTS0D7N06C>规格书详情
NTMTS0D7N06C数据手册ONSEMI中文资料规格书
NTMTS0D7N06C规格书详情
描述 Description
This N-Channel T6 60V MV MOSFET is produced using ON Semiconductor’s advanced Power Trench process that incorporates Shielded Gate technology. This process has been optimized to minimize on-state resistance and yet maintain superior switching performance with best in class soft body diode.
特性 Features
• Very Low RDS(on), Shielded Gate Trench Technology
• Minimize conduction losses
• Low Profile PQFN 8x8 package
• High peak current and low parasitic inductance
• Maximum junction temperature of 175C
• Offers a wider design margin for thermally challenged applications
• RoHS Compliant
应用 Application
• Motor Control
• DC-DC Converters
• Battery Management/Protection
• Power Steering/ Load Switch
• Power Tools, E-Scooters, Drones
• Battery Packs/ Energy Storage Units
• Telecom, Netcom
• Power Supplies
技术参数
- 制造商编号
：NTMTS0D7N06C
- 生产厂家
：ONSEMI
- Pb-free
：Pb
- Halide free
：H
- Status
：Active
- Channel Polarity
：N-Channel
- Configuration
：Single
- V(BR)DSS Min (V)
：60
- VGS Max (V)
：20
- VGS(th) Max (V)
：4
- ID Max (A)
：464
- PD Max (W)
：124
- RDS(on) Max @ VGS = 10 V(mΩ)
：0.72
- Qg Typ @ VGS = 10 V (nC)
：152
- Ciss Typ (pF)
：11535
- Package Type
：DFNW-8
| 供应商 | 型号 | 品牌 | 批号 | 封装 | 库存 | 备注 | 价格 |
|---|---|---|---|---|---|---|---|
onsemi(安森美) |
24+ |
DFNW8(8.4x8.3) |
7350 |
现货供应,当天可交货!免费送样,原厂技术支持!!! |
询价 | ||
ON(安森美) |
24+ |
NA/ |
8735 |
原厂直销,现货供应,账期支持! |
询价 | ||
ON(安森美) |
23+ |
DFNW-8 |
12725 |
公司只做原装正品,假一赔十 |
询价 | ||
ON |
22+23+ |
8-DFNW |
8000 |
新到现货，只做原装进口 |
询价 | ||
ON好价格 |
24+ |
DFN-8 |
9000 |
只做原装正品 有挂有货 假一赔十 |
询价 | ||
ONSEMI/安森美 |
2511 |
DFNW-8 |
360000 |
电子元器件采购降本 30%!盈慧通原厂直采,砍掉中间差价 |
询价 | ||
ON(安森美) |
25+ |
标准封装 |
8000 |
原装，请咨询 |
询价 | ||
onsemi |
21+ |
3000 |
只做原装,优势渠道 ,欢迎实单联系 |
询价 | |||
ON |
25+ |
DFN-8 |
15000 |
原厂原装,价格优势 |
询价 | ||
ON/安森美 |
21+ |
8-DFNW |
2500 |
原装正品 |
询价 |
