MOSFET – Power, Single N-Channel, SO8FL 40 V, 3.1 m, 83 A

Features • Low RDS(on) to Minimize Conduction Losses • Low Capacitance to Minimize Driver Losses • Small Footprint (5 x 6 mm) with Compact Design • These Devices are Pb−Free, Halogen Free/BFR Free and are RoHS Compliant Applications • Motor Drive • Battery Protection • Oring

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ONSEMI

安森美半导体

Power MOSFET, Single, N-Channel, SO8FL, 40V, 3.1mΩ, 83A

The latest 40V standard gate level Power MOSFET Technology with best-in-class On-Resistance for motor driver application. Lower On-Resistance and less gate charge can reduce conduction loss and driving loss. Good softness control for body diode reverse recovery can reduce voltage spike stress withou • Latest 40V Standard Gate Level Power MOSFET Technology\n• Lower On-Resistance\n• Lower Gate Charge\n• Good Body Diode Softness;

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安森美半导体

ON
SO-8 FL

ON

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ON
SO-8FL

ON

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ON
DFN-5

ON

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