NTMFS006N12MC

Power MOSFET, 120V Single N channel 93A, 6m Ohm in Power56 package; • Shielded Gate MOSFET Technology\n• Optimized for Low RDS-on and Qg\n• Max rDS(on) = 6 mΩ at VGS = 10 V, ID = 46 A\n• Reduces Conduction Loss\n• Max rDS(on) = 13 mΩ at VGS = 10 V, ID = 23 A\n• 50% Lower Qrr than other mosfet suppliers\n• Lowers Switching noise /EMI\n• MSL1 Robust Package Design\n• 100% UIL Tested\n• ROHS Compliant\n;

This N-Channel MV MOSFET is produced using advanced PowerTrench® process that incorporates Shielded Gate technology. This process has been optimized to minimize on-state resistance and yet maintain superior switching performance with best in class soft body diode.

ONSEMI

NTMFS006N12MC

MOSFET - Power, Single N-Channel

NTMFS006N12MCT1G

丝印：06N12C；Package：DFN5；MOSFET - Power, Single N-Channel

NTMFSC006N12MC

MOSFET-Power,DualcoolN-Channel,PQFN8120V,6.1m,92A

NTMFS0D7N03CGT1G

ON/安森美
DFN5

ON/安森美