N-Channel Shielded Gate PowerTrench® MOSFET 80V, 32A, 6.0mΩ

This N-Channel MV MOSFET is produced using an advanced PowerTrench® process that incorporates Shielded Gate technology. This process has been optimized to minimize on-state resistance and yet maintain superior switching performance with best in class soft body diode. • 50% Lower Qrr than Other MOSFET Suppliers\n• Softer Switching\n• Soft Body diode\n• Lowers Switching Spike and EMI\n• Max rDS(on) = 14.3 mΩ at VGS = 6 V, ID = 16 A\n• Shielded Gate MOSFET Technology\n• Max rDS(on) = 6.0 mΩ at VGS = 10 V, ID = 32 A\n• MSL1 Robust Package Design\n• 100% UIL ;

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丝印：06N08；Package：PQFN8；MOSFET - Power, Single N-Channel, PQFN8 80 V, 32 A

文件：205.02 Kbytes 页数：7 Pages

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MOSFET - Power, Single N-Channel 80 V, 6.2 m, 77 A

文件：280.68 Kbytes 页数：7 Pages

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MOSFET - Power, Single N-Channel 80 V, 6.2 m, 77 A

文件：280.68 Kbytes 页数：7 Pages

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安森美半导体

MOSFET - Power, Single N-Channel 80 V, 6.2 m, 77 A

Features • Small Footprint (5x6 mm) for Compact Design • Low RDS(on) to Minimize Conduction Losses • Low QG and Capacitance to Minimize Driver Losses • LFPAK4 Package, Industry Standard • AEC−Q101 Qualified and PPAP Capable • These Devices are Pb−Free and are RoHS Compliant

文件：340.17 Kbytes 页数：7 Pages

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