NTMFS006N08MC

N-Channel Shielded Gate PowerTrench® MOSFET 80V, 32A, 6.0mΩ; • 50% Lower Qrr than Other MOSFET Suppliers\n• Softer Switching\n• Soft Body diode\n• Lowers Switching Spike and EMI\n• Max rDS(on) = 14.3 mΩ at VGS = 6 V, ID = 16 A\n• Shielded Gate MOSFET Technology\n• Max rDS(on) = 6.0 mΩ at VGS = 10 V, ID = 32 A\n• MSL1 Robust Package Design\n• 100% UIL Tested\n• RoHS Compliant\n;

This N-Channel MV MOSFET is produced using an advanced PowerTrench® process that incorporates Shielded Gate technology. This process has been optimized to minimize on-state resistance and yet maintain superior switching performance with best in class soft body diode.

NTMFS006N08MC

Marking：06N08；Package：PQFN8；MOSFET - Power, Single N-Channel, PQFN8 80 V, 32 A

NTMYS006N08LH

MOSFET-Power,SingleN-Channel80V,6.2m,77A

NTMYS006N08LHTWG

MOSFET-Power,SingleN-Channel80V,6.2m,77A

NVMYS006N08LH

MOSFET-Power,SingleN-Channel80V,6.2m,77A

Features •SmallFootprint(5x6mm)forCompactDesign •LowRDS(on)toMinimizeConductionLosses •LowQGandCapacitancetoMinimizeDriverLosses •LFPAK4Package,IndustryStandard •AEC−Q101QualifiedandPPAPCapable •TheseDevicesarePb−FreeandareRoHSCompliant

NVMYS006N08LHTWG

MOSFET-Power,SingleN-Channel80V,6.2m,77A

Features •SmallFootprint(5x6mm)forCompactDesign •LowRDS(on)toMinimizeConductionLosses •LowQGandCapacitancetoMinimizeDriverLosses •LFPAK4Package,IndustryStandard •AEC−Q101QualifiedandPPAPCapable •TheseDevicesarePb−FreeandareRoHSCompliant