Power MOSFET and Schottky Diode 20 V, 4.6 A, uCool N-Channel, with 2.0 A Schottky Barrier Diode, 2x2 mm WDFN Package

文件：155.49 Kbytes 页数：7 Pages

ONSEMI

安森美半导体

Power MOSFET and Schottky Diode 20 V, 4.6 A, uCool N-Channel, with 2.0 A Schottky Barrier Diode, 2x2 mm WDFN Package

文件：155.49 Kbytes 页数：7 Pages

ONSEMI

安森美半导体

30W Power Over Ethernet Plus (POE) PD Module

文件：688.51 Kbytes 页数：13 Pages

etc2List of Unclassifed Manufacturers

etc未分类制造商etc2未分类制造商

Logic level TOPFET

DESCRIPTION Monolithic temperature and overload protected logic level power MOSFET in TOPFET2 technology assembled in a 3 pin surface mount plastic package. FEATURES • TrenchMOS output stage • Current limiting • Overload protection • Overtemperature protection • Protection latched reset by

文件：30.06 Kbytes 页数：6 Pages

PHI

飞利浦