NTE5111A thru NTE5166A Zener Diode, 5 Watt 5 Tolerance

Features: ● Zener Voltage: 3.3V to 200V ● High Surge Current Capability

文件：31.71 Kbytes 页数：3 Pages

NTE

NTE5111A thru NTE5166A Zener Diode, 5 Watt 5% Tolerance

NTE

60 V, 1 A PNP low VCEsat (BISS) transistor

General description PNP/PNP low VCEsat Breakthrough in Small Signal (BISS) transistor pair in a SOT457 (SC-74) Surface Mounted Device (SMD) plastic package. NPN complement: PBSS4160DS. Features ■ Low collector-emitter saturation voltage VCEsat ■ High collector current capability: IC and ICM

文件：143.46 Kbytes 页数：14 Pages

PHI

飞利浦

60 V, 1 A PNP/PNP low VCEsat (BISS) transistor

Features * Low collector-emitter saturation voltage VCEsat * High collector current capability IC and ICM * High collector current gain (hFE) at high IC * High efficiency due to less heat generation * Smaller required Printed-Circuit Board (PCB) area than for conventional transistors

文件：263.34 Kbytes 页数：15 Pages

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