| 零件编号 | 下载 订购 | 功能描述/丝印 | 制造商 上传企业 | LOGO |
|---|---|---|---|---|
PRODUCTSPECIFICATION | P-TEC P-TEC corporation | P-TEC | ||
Heavy-dutyconstruction | LSTD Laird Tech Smart Technology | LSTD | ||
NPNBISStransistor DESCRIPTION NPNBISS(BreakthroughInSmallSignal)transistorinaSOT23plasticpackage.PNPcomplement:PMMT591A. FEATURES •Highcurrent(max.1A) •Lowcollector-emittersaturationvoltageensuresreducedpowerconsumption. APPLICATIONS •Batterypoweredunitswherehighcurrentandlo | PhilipsPhilips Semiconductors 飞利浦荷兰皇家飞利浦 | Philips | ||
NPNBISStransistor DESCRIPTION NPNBISS(BreakthroughInSmallSignal)transistorinaSOT23plasticpackage.PNPcomplement:PMMT591A. FEATURES •Highcurrent(max.1A) •Lowcollector-emittersaturationvoltageensuresreducedpowerconsumption. APPLICATIONS •Batterypoweredunitswherehighcurrentandlo | PhilipsPhilips Semiconductors 飞利浦荷兰皇家飞利浦 | Philips | ||
NPNBISStransistor FEATURES •Highcurrent(max.1A) •Lowcollector-emittersaturationvoltageensuresreducedpowerconsumption. APPLICATIONS •Batterypoweredunitswherehighcurrentandlowpowerconsumptionareimportant. DESCRIPTION NPNBISS(BreakthroughInSmallSignal)transistorinaSOT23plasticpac | NEXPERIANexperia B.V. All rights reserved 安世安世半导体(中国)有限公司 | NEXPERIA | ||
SURFACEMOUNTSCHOTTKYBARRIERDIODES | PACELEADERPACELEADER INDUSTRIAL 霈峰霈峰实业有限公司 | PACELEADER | ||
IntermediateAcceptanceHighSensitivityPhototransistor ■Features 1.Epoxyresinpackage 2.Compact 5.Visiblelightcut-offtype:PT491F/PT493F 3.Intermediateacceptance(∆θ:TYP.±40˚) 4.Longleadpintype:PT493/PT493F ■Applications 1.VCRs 2.Optoelectronicswitches | SHARPSharp Microelectronics of the Americas (SMA) 夏普微美国夏普微电子公司（SMA） | SHARP | ||
IntermediateAcceptanceHighSensitivityPhototransistor ■Features 1.Epoxyresinpackage 2.Compact 5.Visiblelightcut-offtype:PT491F/PT493F 3.Intermediateacceptance(∆θ:TYP.±40˚) 4.Longleadpintype:PT493/PT493F ■Applications 1.VCRs 2.Optoelectronicswitches | SHARPSharp Microelectronics of the Americas (SMA) 夏普微美国夏普微电子公司（SMA） | SHARP | ||
Shottkybarrierdiode | ROHMRohm 罗姆罗姆半导体集团 | ROHM | ||
Schottkybarrierdiode ●Features Highreliability Smallmoldtype SuperlowVF ●Application Generalrectification ●Structure Siliconepitaxialplanar | ROHMRohm 罗姆罗姆半导体集团 | ROHM |
详细参数
- 型号：
NTE491T
- 制造商：
NTE Electronics
- 功能描述：
MOSFET-N-CHAN 60V. 31A
- 功能描述：
Trans MOSFET N-CH 60V 0.31A 3-Pin(3+Tab)
| 供应商 | 型号 | 品牌 | 批号 | 封装 | 库存 | 备注 | 价格 |
|---|---|---|---|---|---|---|---|
24+ |
N/A |
56000 |
一级代理-主营优势-实惠价格-不悔选择 |
询价 | |||
新 |
5 |
全新原装 货期两周 |
询价 | ||||
2022+ |
1 |
全新原装 货期两周 |
询价 | ||||
军工特供 |
1923+ |
NA |
688 |
军工一级专供只做进口原装假一罚十价优! |
询价 | ||
NTE |
23+ |
39386 |
原厂授权一级代理,专业海外优势订货,价格优势、品种 |
询价 | |||
NTEELECTRONI |
6000 |
面议 |
19 |
DIP/SMD |
询价 |
相关规格书
更多- STC-642-020
- STC68-3C3AK
- STC685K35
- STC9120C
- STC9960
- RGG.0B.302.CLM
- RGG.1B.303.CLM
- RGG.1B.306.CLM
- RGH1005-2B-P-111-D
- RGH1608-2C-P-101-B
- XC6124A243ER-G
- XC6124A246MG-G
- XC6124A250MG-G
- XC6124A333ER-G
- XC6124A334MR-G
- RGP10G
- RGP10G/23
- RGP10G/4
- RGP10G/73
- RGP10GE/23
- RGP10GE/4
- XC6501A151GR-G
- XC6501A181GR-G
- XC6501A251GR-G
- XC6501A281GR-G
- RGP15D
- RGP15D-E3/1
- RGP15D-E3/4
- RGP15D-E3/54
- RGP15DHE3/54
- RGP15G/1
- RGP02-14E-E3/23
- RGP02-14E-E3/4
- RGP02-14E-E3/53
- RGP02-14E-E3/73
- RGP02-14EHE3/54
- RGM0110-K
- RGM06DRMD-S273
- RGM06DRMD-S664
- RGM06DRMH-S288
- RGM06DRMN-S273
- PTX-BC1
- P-TXFKP01CAZM
- PTX-KIT1DH
- PTY00A-12-10S
相关库存
更多- STC-642-036
- STC68-3C3RK
- STC6NF30V
- STC9127
- STCA1000100
- RGG.0B.303.CLM
- RGG.1B.305.CLM
- RGG.2B.306.CLM
- RGH1005-2B-P-332-B
- RGH1608-2C-P-102-B
- XC6124A243MG-G
- XC6124A248ER-G
- XC6124A327MR-G
- XC6124A333MR-G
- XC6124A337ER-G
- RGP10G/1
- RGP10G/3
- RGP10G/54
- RGP10GE/16
- RGP10GE/3
- XC6501A1517R-G
- XC6501A1817R-G
- XC6501A2517R-G
- XC6501A2817R-G
- XC6501A28A7R-G
- RGP15D/4
- RGP15D-E3/23
- RGP15D-E3/51
- RGP15D-E3/73
- RGP15DHE3/73
- RGP02-14E-E3/1
- RGP02-14E-E3/3
- RGP02-14E-E3/51
- RGP02-14E-E3/54
- RGP02-14EHE3/53
- RGM.0B.304.NLL
- RGM06DRMD
- RGM06DRMD-S288
- RGM06DRMH
- RGM06DRMN
- PTXB2MM6.000MHZ
- PTX-BC2
- PTX-KIT1
- PTX-KIT2
- PTY00A-16-26P
