Silicon NPN Transistor Darlington, General Purpose Amplifier, High Current

Absolute Maximum Ratings: Collector–Emitter Voltage, VCES . . . . . . . . . . . . . . . . . . . . . . . . 50V Collector–Base Voltage, VCBO . . . . . . . . . . . . . . . . . . . . . . . . . . . . 60V Emitter–Base Voltage, VEBO . . . . . . . . . . . . . . . . . . . . . . . . . . . 12V

文件：21.48 Kbytes 页数：2 Pages

NTE

Silicon NPN Transistor RF Power Output for Broadband Amp, PO = 40W @ 512MHz

Description: The NTE480 is a 12.5 Volt epitaxial silicon NPN common emitter transistor designed for broadband applications in the 450 to 512MHz land mobile radio band. This device utilizes diffused emitter resistors to withstand infinite VSWR under operating conditions. Features: • Desi

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NTE

Surge Clamping, Transient Overvoltage Suppressor Unidirectional

Description: The NTE4800 Series of high power transient suppressors are Silicon PN Junction devices designed for absorbtion of high voltage transients associated with power disturbances, switching and induced lighting effects. These devices were designed to be used on the output of switching po

文件：21.07 Kbytes 页数：2 Pages

NTE

Silicon NPN Transistor RF Power Output for Mobile Use, PO = 18W @ 866MHz

Description: The NTE483 is a 12.5 Volt epitaxial silicon NPN planer transistor designed for primarily for 800MHz mobile communications. This device utilizes matched input technology (Tuned Q) to increase bandwidth and power gain over the complete range of 806–866MHz. Features: • Designe

文件：22.48 Kbytes 页数：2 Pages

NTE

Silicon NPN Transistor RF Power Output for Mobile Use, PO = 25W @ 947MHz

Description: The NTE484 is a 12.5 Volt epitaxial silicon NPN planer transistor designed for primarily for 800MHz mobile communications. This device is internally input matched in the common base configuration for extremely broadband performance and optimum gain characteristics. Features:

文件：22.49 Kbytes 页数：2 Pages

NTE

Silicon NPN Transistor RF High Frequency Amplifier

Description: The NTE486 is a silicon NPN high frequency RF transistor in a TO39 type package designed for use in 12.5V UHF large–signal applications required in industrial equipment. Features: • Specified 12.5V, 470MHz Characteristics: Output Power = 0.75W Minimum Gain = 8dB

文件：23.55 Kbytes 页数：2 Pages

NTE

Surge Clamping, Transient Overvoltage Suppressor Unidirectional

Description: The NTE4800 Series of high power transient suppressors are Silicon PN Junction devices designed for absorbtion of high voltage transients associated with power disturbances, switching and induced lighting effects. These devices were designed to be used on the output of switching po

文件：21.07 Kbytes 页数：2 Pages

NTE

Silicon NPN Transistor RF Power Output

Description: The NTE488 is a silicon NPN epitaxial planar type transistor designed for industrial use RF power Amplifiers on VHF band mobile radio applications. Features: • High Power Gain: Gpe ≥ 10.7dB @ VCC = 13.5V, PO = 3.5W, f = 175MHz • TO39 Metal Sealed Package for High Reliability • Em

文件：21.93 Kbytes 页数：2 Pages

NTE

Silicon P-Channel JFET Transistor General Purpose AF Amplifier

Absolute Maximum Ratings: (TA = +25°C unless otherwise specified) Gate–Drain Voltage (Note 1), VGD . . . . . . . . . . . . . . . . . . . . . . . . . . 30V Gate–Source Voltage (Note 1), VGS . . . . . . . . . . . . . . . . . . . . . . . . . 30V Gate Current, IG . . . . . . . . . . . . .

文件：21.57 Kbytes 页数：2 Pages

NTE

Darlington transistors

NTE