Silicon NPN Transistor RF Power Output PO = 40W @ 175MHz

Description: The NTE360 is designed primarily for wideband large−signal amplifier stages in the 125−175MHz frequency range. Features: • Specified 28 Volt, 175MHz Characteristics: Output Power = 40 Watts Minimum Gain = 7.6dB Efficiency = 60 • Characterized from 125 to 175MHz • I

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NTE

metal oxide varistor disc type

文件：280.93 Kbytes 页数：4 Pages

KOA

AC & EC FANS

文件：5.21441 Mbytes 页数：8 Pages

ORIONFANS

Hallogic Hall-effect Sensors

Description: These Hall-effect devices contain a monolithic integrated circuit which incorporates a Hall element, a linear amplifier, a threshold amplifier, and Schmitt trigger on a single Hallogic® silicon chip. Included on-chip is a band gap voltage regulator to allow operation with a wide rang

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OPTEK