Silicon NPN Transistor RF & Microwave Transistor

Description: RF Power Transistor 20W − 175 MHz Features: Specified 28 Volt, 175MHz Characteristics Output Power = 20 Watts Minimum Gain = 8.2dB Efficiency = 60 Characterized from 125 to 175MHz Includes Series Equivalent Impedances

文件：72.22 Kbytes 页数：2 Pages

NTE

RF transistors

NTE

Reflective photosensor (photoreflector)

The RPR-359F is a reflective photosensor. The emitter is a GaAs infrared light emitting diode and the detector is a high-sensitivity, silicon planar phototransistor. A plastic lens is used for high sensitivity. In addition, since it is molded in plastic with a visible light filter, there is almost

文件：79.03 Kbytes 页数：3 Pages

ROHM

罗姆

Reflective photosensor (photoreflector)

The RPR-359F is a reflective photosensor. The emitter is a GaAs infrared light emitting diode and the detector is a high-sensitivity, silicon planar phototransistor. A plastic lens is used for high sensitivity. In addition, since it is molded in plastic with a visible light filter, there is almost

文件：79.03 Kbytes 页数：3 Pages

ROHM

罗姆

HIGH ENERGY SPARK GAP DEVICES

DESCRIPTION CP Clare’s TG Legacy Series of two electrode sparkgaps excel in applications that require the efficient transfer of high voltage, high energy pulses and DC overvoltage protection for magnetrons, diodes, capacitors, etc. The TG Legacy Series also includes three electrode triggered sp

文件：195 Kbytes 页数：7 Pages

CLARE

Clare, Inc.