Silicon NPN Transistor RF Power Output PO = 30W @ 175MHz

Absolute Maximum Ratings: Collector−Emitter Voltage, VCEO . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 17V Collector−Base Voltage, VCBO . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .

文件：71.44 Kbytes 页数：2 Pages

NTE

Silicon NPN Transistor RF Power Output PO = 30W @ 175MHz

Absolute Maximum Ratings:\nCollector−Emitter Voltage, VCEO . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 17V\nCollector−Base Voltage, VCBO . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .

NTE

HIGH VOLTAGE FAST-SWITCHING NPN POWER TRANSISTOR

DESCRIPTION The device is manufactured using Multiepitaxial Mesa technology for cost-effective high performance and uses a Hollow Emitter structure to enhance switching speeds. It is designed for high speed switching applications such as power supplies and horizontal deflection circuits in TVs a

文件：68.92 Kbytes 页数：6 Pages

STMICROELECTRONICS

意法半导体

6W High Power Laser Diode

Description The SLD344YT has a compatible package, and allows independent thermal and electric design. It is a high power laser diode that affords easy optical design. Features • High-optical power output Recommended optical power output: PO = 6.0W • High-optical power density: 6W/400µm

文件：75.6 Kbytes 页数：3 Pages

SONYSony Corporation

索尼

Varactor Diode for AM Low-Voltage Electronic Tuning

Varactor Diode for AM Low-Voltage Electronic Tuning Features • Twin type varactor diode for low-voltage AM electronic tuning applivations. • Low operating voltage (≤4.5V). • High Q.

文件：49.16 Kbytes 页数：3 Pages

SANYO

三洋