Silicon NPN Transistor RF Power Output

Description: The NTE339 is a 12.5 volt epitaxial silicon NPN planar transistor designed primarily for use in large−signal amplifier stages in industrial communications equipment operating at frequencies to 80MHz. ● Specified 12.5 Volt, 50MHz Characteristics Output Power = 40 Watts Mini

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NTE

RF transistors

NTE

High Precision Off-line Primary-Side PWM Power Switch

GENERAL DESCRIPTION OB339F is a primary side regulation off-line LED lighting controller which can achieve accurate LED current. It significantly simplifies LED lighting system design by eliminating the secondary side feedback circuitry. Proprietary Constant Voltage (CV) and Constant Current

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ONBRIGHT

昂宝电子

LOW POWER QUAD COMPARATOR

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RENESAS

瑞萨

LM339B, LM2901B, LM339, LM239, LM139, LM2901 Quad Differential Comparators

1 Features • NEW LM339B and LM2901B • Improved specifications of B-version – Maximum rating: up to 38 V – ESD rating (HBM): 2k V – Low input offset: 0.37 mV – Low input bias current: 3.5 nA – Low supply-current: 200 μA per comparator – Faster response time of 1 μsec – Extended temperature

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TI

德州仪器