Insulated Gate Bipolar Transistor N-Channel Enhancement Mode, High Speed Switch

Features: ● High Input Impedance ● Low Saturation Voltage ● Enhancement Mode ● 20V Gate Drive Applications: ● High Power Switching ● Motor Control

文件：19.62 Kbytes 页数：2 Pages

NTE

IGBTs

NTE

3.0mm Round Phototransistor

文件：210.24 Kbytes 页数：1 Pages

ETC1List of Unclassifed Manufacturers

etc未分类制造商未分类制造商

155-MBPS TO 3.3-GBPS LIMITING AMPLIFIER

文件：253.54 Kbytes 页数：12 Pages

TI

德州仪器

155-Mbps To 3.3-Gbps LIMITING AMPLIFIER

文件：914.45 Kbytes 页数：18 Pages

TI

德州仪器