Gate Turn-Off SCRs

The NTE308 and NTE310 series integrated thyristor/rectifiers are all-diffused power monolithic circuits that incorporate a silicon controlled rectifier and a silicon rectifier on a common pellet. The NTE308 series types are used as bipolar switches to control horizontal yoke current during the beam

NTE

Integrated Circuit NMOS, 64K Erasable EPROM, 200ns

Description:\nThe NTE2764 is a 65,536–bit (8192 X 8 bit) Ultraviolet Erasable and Electrically Programmable Read–Only Memory (EPROM) in a 28–Lead DIP type package which operates from a single +5V supply, making it ideal for microprocessor applications. It features an output enable control and offers

NTE

Integrated Circuit NMOS, 64K Erasable EPROM, 200ns

Description: The NTE2764 is a 65,536–bit (8192 X 8 bit) Ultraviolet Erasable and Electrically Programmable Read–Only Memory (EPROM) in a 28–Lead DIP type package which operates from a single +5V supply, making it ideal for microprocessor applications. It features an output enable control and of

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NTE

Silicon-Power Rectifiers

Silicon-Power Rectifiers Nominal current – Nennstrom 12 A Repetitive peak reverse voltage 50...1000 V Weight approx. – Gewicht ca. 5.5 g Recommended mounting torque 18 ± 10 lb.in. Index R: Anode to stud / am Gewinde (e.g. 1N 1199 A/R)

文件：154.83 Kbytes 页数：2 Pages

DIOTEC

德欧泰克

DC-6.5 GHz, Cascadable GaAs MMIC Amplifier

Product Description Stanford Microdevices’ SNA-276 is a GaAs monolithic broadband amplifier (MMIC) housed in a low-cost surface mountable stripline package. This amplifier provides 16dB of gain when biased at 50mA and 4V. Product Features • Cascadable 50 Ohm Gain Block • 16dB Gain, +14dBm P1dB

文件：81.93 Kbytes 页数：3 Pages

STANFORD

High Power GaAs SPDT Switch DC - 3 GHz

Features ● +39 dBm Typ. 1 dB Compression Point, -8V Control ● +65 dBm Typ. 3rd Order Intercept, -8V Control ● Insertion Loss of 0.4 dB Typical ● Low Power Consumption ● Fast Switching Speed

文件：105.44 Kbytes 页数：3 Pages

MACOM