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NTE244

Silicon Complementary Transistors Darlington Power Amplifier

Description: The NTE243 (NPN) and NTE244 (PNP) are silicon complementary Darlington transistors in a TO3 type case designed for general–purpose amplifier and low–frequency switching applications. Features: • High DC Current Gain: hFE = 3000 Typ @ IC = 4A • Collector–Emitter Sustainin

文件:26.51 Kbytes 页数:2 Pages

NTE

NTE245

Silicon Complementary Transistors Darlington Power Amplifier

Description: The NTE245 (NPN) and NTE246 (PNP) are silicon complementary Darlington transistors in a TO3 type case designed for use as output devices in general purpose amplifier applications. Features: • High DC Current Gain: hFE = 4000 Typ @ IC = 5A • Monolithic Construction with B

文件:25.07 Kbytes 页数:2 Pages

NTE

NTE246

Silicon Complementary Transistors Darlington Power Amplifier

Description: The NTE245 (NPN) and NTE246 (PNP) are silicon complementary Darlington transistors in a TO3 type case designed for use as output devices in general purpose amplifier applications. Features: • High DC Current Gain: hFE = 4000 Typ @ IC = 5A • Monolithic Construction with B

文件:25.07 Kbytes 页数:2 Pages

NTE

NTE247

Silicon Complementary Transistors Darlington Power Amplifier

Description: The NTE247 (NPN) and NTE248 (PNP) are silicon complementary Darlington transistors in a TO3 type case designed for general–purpose amplifier and low–frequency switching applications. Features: • High DC Current Gain: hFE = 3500 Typ @ IC = 5A • Collector–Emitter Sustainin

文件:26.37 Kbytes 页数:2 Pages

NTE

NTE248

Silicon Complementary Transistors Darlington Power Amplifier

Description: The NTE247 (NPN) and NTE248 (PNP) are silicon complementary Darlington transistors in a TO3 type case designed for general–purpose amplifier and low–frequency switching applications. Features: • High DC Current Gain: hFE = 3500 Typ @ IC = 5A • Collector–Emitter Sustainin

文件:26.37 Kbytes 页数:2 Pages

NTE

NTE249

Silicon Complementary Transistors Darlington Power Amplifier

Description: The NTE249 (NPN) and NTE250 (PNP) are silicon complementary Darlington transistors in a TO3 type case designed for use as output devices in complementary general purpose amplifier applications. Features: • High DC Current Gain: hFE = 3500 Typ @ IC = 10A • Monolithic Cons

文件:25.18 Kbytes 页数:2 Pages

NTE

NTE24

Complementary Transistors

NTE

NTE2401

Bi-Polar Transistor Selector Guide

Description:\nThe NTE2401 is a silicon PNP transistor in a plastic SOT–23 type surface mount package designed for use in RF stages in FM front–ends in common base configuration for SMD applications.

NTE

NTE2402

Bi-Polar Transistor Selector Guide

NTE

详细参数

  • 型号:

    NTE24

  • 制造商:

    NTE Electronics

  • 功能描述:

    TRANSISTOR NPN SILICON 100V IC=1A TO-237 CASE GENERAL PURPOSE AMP/SWITCH COMP TO

  • 功能描述:

    T-NPN-SI PLASTIC POWER

  • 功能描述:

    TO-237 NPN GEN PUR

  • 功能描述:

    Trans GP BJT NPN 80V 2A 3-Pin(3+Tab) TO-237

供应商型号品牌批号封装库存备注价格
24+
N/A
64000
一级代理-主营优势-实惠价格-不悔选择
询价
27
全新原装 货期两周
询价
NTE
2017+
SOT-23
39000
原装正品,诚信经营
询价
2022+
23
全新原装 货期两周
询价
NTE ELECTRONICS
NDC
216
公司优势库存 热卖中!
询价
23+
39291
原厂授权一级代理,专业海外优势订货,价格优势、品种
询价
NTE
22+
SOT-89
100000
代理渠道/只做原装/可含税
询价
NTE
23+
SOT-89
89630
当天发货全新原装现货
询价
CCSEMI/芯能圆
23+
SOT-23
50000
原装正品 支持实单
询价
NK/南科功率
2025+
SOT-23
986966
国产
询价
更多NTE24供应商 更新时间2025-10-11 10:06:00