Power MOSFET 45 A, 25 V, N−Channel DPAK

Features • Planar HD3e Process for Fast Switching Performance • Low RDS(on) to Minimize Conduction Loss • Low Ciss to Minimize Driver Loss • Low Gate Charge • Optimized for High Side Switching Requirements in High−Efficiency DC−DC Converters • These are Pb−Free Devices

文件：119.19 Kbytes 页数：7 Pages

ONSEMI

安森美半导体

N-Channel 30-V (D-S) MOSFET

文件：959.98 Kbytes 页数：8 Pages

VBSEMI

微碧半导体

Power MOSFET 45 Amps, 25 Volts

文件：65.76 Kbytes 页数：8 Pages

ONSEMI

安森美半导体

isc N-Channel MOSFET Transistor

FEATURES ·Drain Current -ID= 45A@ TC=25℃ ·Drain Source Voltage -VDSS= 25V(Min) ·Static Drain-Source On-Resistance -RDS(on) = 16.5mΩ(Max)@VGS= 10V DESCRIPTION ·Motor drive, DC-DC converter, power switch and solenoid drive.

文件：278.52 Kbytes 页数：2 Pages

ISC

无锡固电

Power MOSFET 45 Amps, 25 Volts

文件：65.76 Kbytes 页数：8 Pages

ONSEMI

安森美半导体