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NTC160N120SC1中文资料Silicon Carbide MOSFET, N‐Channel, 1200 V, 160 mΩ, Bare Die数据手册ONSEMI规格书
NTC160N120SC1规格书详情
描述 Description
Silicon Carbide (SiC) MOSFET uses a completely new technology
that provide superior switching performance and higher reliability
compared to Silicon. In addition, the low ON resistance and compact
chip size ensure low capacitance and gate charge. Consequently,
system benefits include highest efficiency, faster operation frequency,
increased power density, reduced EMI, and reduced system size.
特性 Features
• 1200 V
• TJ= 175°C
• High Speed Switching with Low Capacitance
• 100% UIL Tested
应用 Application
• Boost Inverter
• PV Charging
• Motor Drives
• UPS
• Charging Stations
技术参数
- 制造商编号
：NTC160N120SC1
- 生产厂家
：ONSEMI
- Pb-free
：Pb
- Halide free
：H
- Status
：Product Preview
- Channel Polarity
：N-Channel
- Configuration
：Single
- Blocking Voltage BVDSS (V)
：1200
- ID(max) (A)
：10
- RDS(on) Typ @ 25°C (mΩ)
：160
- Qg Total (C)
：24.2
- Output Capacitance (C)
：39.1
- Tj Max (°C)
：175
| 供应商 | 型号 | 品牌 | 批号 | 封装 | 库存 | 备注 | 价格 |
|---|---|---|---|---|---|---|---|
风华 |
25+ |
DIP |
3000 |
国产替换现货降本 |
询价 | ||
ROHS |
8560 |
一级代理 原装正品假一罚十价格优势长期供货 |
询价 | ||||
NTC |
23+ |
38000 |
原厂授权一级代理,专业海外优势订货,价格优势、品种 |
询价 | |||
NTC/航臣 |
2450+ |
DIP |
8850 |
只做原装正品假一赔十为客户做到零风险!! |
询价 | ||
NTC/航臣 |
24+ |
DIP2 |
60000 |
全新原装现货 |
询价 | ||
风华高科 |
24+ |
con |
35960 |
查现货到京北通宇商城 |
询价 | ||
NTC |
21+ |
DIP |
10000 |
原装现货假一罚十 |
询价 | ||
FH(风华) |
2021+ |
径向引线P=7.5mm |
499 |
询价 | |||
N/A |
24+ |
ROHS |
990000 |
明嘉莱只做原装正品现货 |
询价 | ||
RUILON(瑞隆源) |
2024+ |
插件,P=7.5mm |
500000 |
诚信服务,绝对原装原盘 |
询价 |
