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首页>NTBG020N090SC1>芯片详情
NTBG020N090SC1_ONSEMI/安森美半导体_Silicon Carbide (SiC) MOSFET – EliteSiC, 20mohm, 900 V, M2, D2PAK-7L芯球通科技
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产品属性
- 类型
描述
- 型号
:NTBG020N090SC1
- Pb-free
:Pb
- Halide free
:H
- Status
:Active
- Channel Polarity
:N-Channel
- Configuration
:Single
- V(BR)DSS Min (V)
:900
- VGS Max (V)
:19
- VGS(th) Max (V)
:4.3
- ID Max (A)
:112
- PD Max (W)
:477
- RDS(on) Max @ VGS = 2.5 V(mΩ)
:NA
- RDS(on) Max @ VGS = 4.5 V(mΩ)
:NA
- RDS(on) Max @ VGS = 10 V(mΩ)
:NA
- Qg Typ @ VGS = 4.5 V (nC)
:NA
- Qg Typ @ VGS = 10 V (nC)
:NA
- Ciss Typ (pF)
:4415
- Package Type
:D2PAK7 (TO-263-7L HV)
供应商
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