MOSFET - N-Channel Shielded Gate PowerTrench® 150 V, 7.3 mΩ, 101 A

MOSFET - N-Channel Shielded Gate PowerTrench® 150 V, 7.3 mΩ, 101 A • Shielded Gate MOSFET Technology\n• Optimized Switching performance\n• Max RDS(on) = 7.3 mΩ at VGS = 10 V, ID = 62 A\n• Industry’s Lowest Qrr and softest Body-Diode for superior low noise switching\n• 50% Lower Qrr than other MOSFET Suppliers\n• High efficiency with lower switching spike and EM;

ONSEMI

安森美半导体

MOSFET - N-Channel Shielded Gate PowerTrench

文件：219.05 Kbytes 页数：7 Pages

ONSEMI

安森美半导体

MOSFET - N-Channel Shielded Gate PowerTrench 150 V, 7.3 m, 101 A

文件：147.87 Kbytes 页数：6 Pages

ONSEMI

安森美半导体

ON
TO-263-7

ON

上传：深圳市英特法电子科技有限公司

TDK
SMD

TDK

东电化

上传：北京天阳诚业科贸有限公司