NVB5860N

iscN-ChannelMOSFETTransistor

FEATURES ·DrainCurrent-ID=220A@TC=25℃ ·DrainSourceVoltage-VDSS=60V(Min) ·StaticDrain-SourceOn-Resistance -RDS(on)=3mΩ(Max)@VGS=10V DESCRIPTION ·Motordrive,DC-DCconverter,powerswitch andsolenoiddrive.

NVB5860NL

N-ChannelPowerMOSFET

PLP5860RKPR

LP586011횞18LEDMatrixDriverwith8-bitAnalogand8-/16-bitPWMDimming

PLP5860TRKPR

LP5860T11×18LEDHigh-CurrentMatrixDriverwith8-BitAnalogand8-Bitor16-BitPWMDimming

1Features •LEDmatrixtopology: –18constantcurrentsinkswith11scanswitches for198LEDdots –Configurablefor1to11scanswitches •Operatingvoltagerange: –VCC/VLEDrange:2.7Vto5.5V –Logicpinscompatiblewith1.8V,3.3V,and5V •18constantcurrentsinkswithhigh

S5860

S5860SeriesSwitches

SZ5860

5.0WATT6.8-270VOLTSZENERDIODES

TCO-5860

TCXOMINIATURESIZELOWPROFILE

TCO-5860series •Frequencyrange:10MHzto40MHz •Supplyvoltage:2.8VTyp. •Frequency/temperaturecoefficient:±2×10-6Max. •Externaldimensions:3.2×2.5×0.9tmmTyp. •Applications:Cellularphone(WiMAX,CDMA,WCDMA) •Features:Lowcurrentconsumptio

TD5860

SourceandSink1.5A/2AFastTransientResponseLineRegulator

UCN-5860A

STEPPER-MOTORTRANSLATORSANDDRIVERS

USB-5860

16-chIsolatedDigitalInputand16-chIsolatedDigitalOutputUSB3.0I/Omodule