NTB190N65S3HF中文资料功率 MOSFET，N 沟道，SUPERFET® III，FRFET®，650 V，20 A，190 mΩ，D2PAK数据手册ONSEMI规格书

描述 Description

SUPERFET III MOSFET is ON Semiconductor’s brand−new high
voltage super−junction (SJ) MOSFET family that is utilizing charge
balance technology for outstanding low on−resistance and lower gate
charge performance. This advanced technology is tailored to minimize
conduction loss, provide superior switching performance, and
withstand extreme dv/dt rate.
Consequently, SUPERFET III MOSFET is very suitable for the
various power systems for miniaturization and higher efficiency.
SUPERFET III FRFET MOSFET’s optimized reverse recovery
performance of body diode can remove additional component and
improve system reliability.

特性 Features

• 700 V @ TJ = 150 °C
• Higher system reliability at low temperature operation
• Ultra Low Gate Charge (Typ. Qg = 35 nC)
• Lower switching loss
• Low Effective Output Capacitance (Typ. Coss(eff.) = 464 pF)
• Lower switching loss
• Excellent body diode performance (low Qrr, robust body diode)
• Higher system reliability in LLC and Phase shift full bridge circuit
• Optimized Capacitance
• Lower peak Vds and lower Vgs oscillation
• RoHS Compliant
• 100% Avalanche Tested
• Typ. RDS(on) = 161 mΩ

应用 Application

• Telecommunication
• Cloud system
• Industrial
• Telecom power
• Server power
• EV charger
• Solar / UPS