OPB855

SlottedOpticalSwitch

Description: TheOPB855slottedopticalswitchconsistsofaninfraredemittingdiodeandaNPNsiliconphototransistor,mountedonoppositesidesofa0.205”(5.21mm)wideslotinaninexpensiveplastichousing.Switchingofthephototransistoroccurswheneveranopaqueobjectpassesthroughth

OPB855

SlottedOpticalSwitch

Description: TheOPB855slottedopticalswitchconsistsofaninfraredemittingdiodeandaNPNsiliconphototransistor,mountedonoppositesidesofa0.205”(5.21mm)wideslotinaninexpensiveplastichousing.Switchingofthephototransistoroccurswheneveranopaqueobjectpassesthroughth

PFR855

FASTRECOVERYRECTIFIERDIODE

DESCRIPTION Theirhighefficiencyandhighreliabilitycombinedwithsmallsizeandlowcostmakethesefastrecoveryrectifierdiodeveryattractivecomponentsformanydemandingapplications. ■LOWFORWARDVOLTAGEDROP ■HIGHSURGECURRENTCAPABILITY APPLICATIONS ■AC-DCPOWERSUPPLIESAND

PFR855S

FASTRECOVERYRECTIFIERDIODES

DESCRIPTION Theirhighefficiencyandhighreliabilitycombinedwithsmallsizeandlowcostmakethesefastrecoveryrectifierdiodesveryattractivecomponentsformanydemandingapplications. ■LOWFORWARDVOLTAGEDROP ■HIGHSURGECURRENTCAPABILITY APPLICATIONS ■AC-DCPOWERSUPPLIESAND

PGA855

PGA849Low-Noise,Wide-Bandwidth,PrecisionProgrammableGainInstrumentationAmplifier

1Features •Differentialtosingle-endedconversion •Eightpin-programmablebinarygains –G(V/V)=⅛,¼,½,1,2,4,8,and16 •Lowgainerrordrift:2ppm/°C(max) •Fastersignalprocessing: –Widebandwidth:10MHzatallgains –Highslewrate:35V/μs –Settlingtime: 500nsto0.01

PGA855

PGA855Low-Noise,Wide-Bandwidth,FullyDifferentialOutputProgrammable-GainInstrumentationAmplifier

1Features •Eightpin-programmablebinarygains –G(V/V)=⅛,¼,½,1,2,4,8,and16 •Lowgainerrordrift:1ppm/°C(max)atG=1V/V •Fullydifferentialoutputs –Independentoutputpower-supplypinstoallow forADCinputoverdriveprotection –Outputcommon-modecontrol •Faster

PGA855

PGA855Low-Noise,Wide-Bandwidth,FullyDifferentialOutputProgrammable-GainInstrumentationAmplifier

1Features •Eightpin-programmablebinarygains –G(V/V)=⅛,¼,½,1,2,4,8,and16 •Lowgainerrordrift:2ppm/°C(max) •Fullydifferentialoutputs –Independentoutputpower-supplypins –Outputcommon-modecontrol •Fastersignalprocessing: –Widebandwidth:10MHzatallgains

PGA855

PGA849Low-Noise,Wide-Bandwidth,PrecisionProgrammableGainInstrumentationAmplifier

1Features •Differentialtosingle-endedconversion •Eightpin-programmablebinarygains –G(V/V)=⅛,¼,½,1,2,4,8,and16 •Lowgainerrordrift:±2ppm/°C(maximum) •Fastersignalprocessing: –Widebandwidth:10MHzatallgains –Highslewrate:35V/μsatG≥½V/V –Settlingti

PGA855RGTR

PGA855Low-Noise,Wide-Bandwidth,FullyDifferentialOutputProgrammable-GainInstrumentationAmplifier

1Features •Eightpin-programmablebinarygains –G(V/V)=⅛,¼,½,1,2,4,8,and16 •Lowgainerrordrift:1ppm/°C(max)atG=1V/V •Fullydifferentialoutputs –Independentoutputpower-supplypinstoallow forADCinputoverdriveprotection –Outputcommon-modecontrol •Faster

RB855

RadialLeadedRFInductors