NT5SV64M4AT中文资料etc未分类制造商数据手册PDF规格书

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Description

The NT5SV64M4AT, NT5SV32M8AT, and NT5SV16M16AT are four-bank Synchronous DRAMs organized as 16Mbit x 4 I/O x 4 Bank, 8Mbit x 8 I/O x 4 Bank, and 4Mbit x 16 I/O x 4 Bank, respectively. These synchronous devices achieve high-speed data transfer rates of up to 133MHz by employing a pipeline chip architecture that synchronizes the output data to a system clock. The chip is fabricated with NTC’s advanced 256Mbit single transistor CMOS DRAM process technology.

Features

• High Performance: (TABLE)

• Single Pulsed RAS Interface

• Fully Synchronous to Positive Clock Edge

• Four Banks controlled by BA0/BA1 (Bank Select)

• Programmable CAS Latency: 2, 3

• Programmable Burst Length: 1, 2, 4, 8

• Programmable Wrap: Sequential or Interleave

• Multiple Burst Read with Single Write Option

• Automatic and Controlled Precharge Command

• Data Mask for Read/Write control (x4, x8)

• Dual Data Mask for byte control (x16)

• Auto Refresh (CBR) and Self Refresh

• Suspend Mode and Power Down Mode

• Standard Power operation

• 8192 refresh cycles/64ms

• Random Column Address every CK (1-N Rule)

• Single 3.3V ± 0.3V Power Supply

• LVTTL compatible

• Package: 54-pin 400 mil TSOP-Type II

• -7K parts for PC133 2-2-2 operation

-75B parts for PC133 3-3-3 operation

-8B parts for PC100 2-2-2 operation