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NT5DS32M8AW-75B中文资料PDF规格书
NT5DS32M8AW-75B规格书详情
[Nanya]
Description
The 256Mb DDR SDRAM is a high-speed CMOS, dynamic random-access memory containing 268,435,456 bits. It is internally configured as a quad-bank DRAM.
Features
• Double data rate architecture: two data transfers per clock cycle
• Bidirectional data strobe (DQS) is transmitted and received with data, to be used in capturing data at the receiver
• DQS is edge-aligned with data for reads and is centeraligned with data for writes
• Differential clock inputs (CK and CK)
• Four internal banks for concurrent operation
• Data mask (DM) for write data
• DLL aligns DQ and DQS transitions with CK transitions
• Commands entered on each positive CK edge; data and data mask referenced to both edges of DQS
• Burst lengths: 2, 4, or 8
• CAS Latency: 2, 2.5
• Auto Precharge option for each burst access
• Auto Refresh and Self Refresh Modes
• 7.8ms Maximum Average Periodic Refresh Interval
• 2.5V (SSTL_2 compatible) I/O
• VDDQ = 2.5V ± 0.2V
• VDD = 2.5V ± 0.2V
• -7K parts support PC2100 modules.
-75B parts support PC2100 modules
-8B parts support PC1600 modules
产品属性
- 型号:
NT5DS32M8AW-75B
- 功能描述:
256Mb Double Data Rate SDRAM
供应商 | 型号 | 品牌 | 批号 | 封装 | 库存 | 备注 | 价格 |
---|---|---|---|---|---|---|---|
NANYA/南亚 |
23+ |
NA/ |
3790 |
原厂直销,现货供应,账期支持! |
询价 | ||
NANYA |
23+ |
TSOP66 |
20000 |
全新原装假一赔十 |
询价 | ||
NANYA |
21+ |
TSOP66 |
35200 |
一级代理/放心采购 |
询价 | ||
NANYA/南亚 |
TSOP66 |
98900 |
原厂集团化配单-有更多数量-免费送样-原包装正品现货- |
询价 | |||
NANYA/南亚 |
TSOP66 |
265209 |
假一罚十原包原标签常备现货! |
询价 | |||
NANYA/南亚 |
23+ |
TSOP66 |
20000 |
原装正品 欢迎咨询 |
询价 | ||
NANYA/南亚 |
23+ |
TSOP66 |
98900 |
原厂原装正品现货!! |
询价 | ||
NANYA |
21+ |
BGA |
960 |
进口原装正品现货 |
询价 | ||
NANYA/南亚 |
22+ |
BGA |
9600 |
原装现货,优势供应,支持实单! |
询价 | ||
NANYA |
2023+ |
TSSOP |
50000 |
原装现货 |
询价 |