32Mx64 bit Two Bank Unbuffered SDRAM Module

[Nanya] Description NT256S64V8HC0G is unbuffered 168-pin Synchronous DRAM Dual In-Line Memory Modules (DIMMs) which is organized as 32Mx64 high-speed memory arrays and is configured as two 16M x 64 physical bank. The DIMM uses sixteen 16Mx8 SDRAMs in 400mil TSOP II pack-ages. The DIMM achieves h

文件：156.51 Kbytes 页数：10 Pages

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32Mx64 bit Two Bank Unbuffered SDRAM Module

[Nanya] Description NT256S64V8HC0G is unbuffered 168-pin Synchronous DRAM Dual In-Line Memory Modules (DIMMs) which is organized as 32Mx64 high-speed memory arrays and is configured as two 16M x 64 physical bank. The DIMM uses sixteen 16Mx8 SDRAMs in 400mil TSOP II pack-ages. The DIMM achieves h

文件：156.51 Kbytes 页数：10 Pages

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32Mx72 bit One Bank Unbuffered SDRAM Module

[Nanya] Description NT256S72V89A0G is unbuffered 168-pin Synchronous DRAM Dual In-Line Memory Modules (DIMM) which is organized as 32Mx72 high-speed memory arrays and is configured as one 32M x 72 physical bank. The DIMM uses nine 32Mx8 SDRAMs in 400mil TSOP II packages. The DIMM achieves high-s

文件：179.97 Kbytes 页数：12 Pages

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32Mx72 bit One Bank Unbuffered SDRAM Module

[Nanya] Description NT256S72V89A0G is unbuffered 168-pin Synchronous DRAM Dual In-Line Memory Modules (DIMM) which is organized as 32Mx72 high-speed memory arrays and is configured as one 32M x 72 physical bank. The DIMM uses nine 32Mx8 SDRAMs in 400mil TSOP II packages. The DIMM achieves high-s

文件：179.97 Kbytes 页数：12 Pages

ETCList of Unclassifed Manufacturers

未分类制造商

32Mx72 bit One Bank Unbuffered SDRAM Module

[Nanya] Description NT256S72V89A0G is unbuffered 168-pin Synchronous DRAM Dual In-Line Memory Modules (DIMM) which is organized as 32Mx72 high-speed memory arrays and is configured as one 32M x 72 physical bank. The DIMM uses nine 32Mx8 SDRAMs in 400mil TSOP II packages. The DIMM achieves high-s

文件：179.97 Kbytes 页数：12 Pages

ETCList of Unclassifed Manufacturers

未分类制造商

32Mx72 bit One Bank Unbuffered SDRAM Module

[Nanya] Description NT256S72V89A0G is unbuffered 168-pin Synchronous DRAM Dual In-Line Memory Modules (DIMM) which is organized as 32Mx72 high-speed memory arrays and is configured as one 32M x 72 physical bank. The DIMM uses nine 32Mx8 SDRAMs in 400mil TSOP II packages. The DIMM achieves high-s

文件：179.97 Kbytes 页数：12 Pages

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??0 V, ??2 A, P?묬hannel DPAK

Power MOSFET −60 V, −12 A, P−Channel DPAK This Power MOSFET is designed to withstand high energy in the avalanche and commutation modes. Designed for low−voltage, high−speed switching applications in power supplies, converters, and power motor controls. These devices are particularly well suite

文件：124.5 Kbytes 页数：8 Pages

ONSEMI

安森美半导体

NFC Forum Type 2 Tag compliant IC with 144/888 bytes user memory and field detection

General description The NTAG213F and NTAG216F are the new NFC forum compliant Type 2 Tag products developed by 恩XP Semiconductors for applications in electronics (i.e. connection handover, Bluetooth simple pairing, Wi-Fi Protected set-up, device authentication, gaming and others) - see Figure 1.

文件：1.48941 Mbytes 页数：55 Pages

恩XP

NFC Forum Type 2 Tag compliant IC with 144/888 bytes user memory and field detection

General description The NTAG213F and NTAG216F are the new NFC forum compliant Type 2 Tag products developed by 恩XP Semiconductors for applications in electronics (i.e. connection handover, Bluetooth simple pairing, Wi-Fi Protected set-up, device authentication, gaming and others) - see Figure 1.

文件：1.48941 Mbytes 页数：55 Pages

恩XP

NTAG 213 TT - NFC T2T compliant IC with Tag Tamper feature

General description NTAG 213 TT offers extended features compared to the NTAG 213 providing additional benefits for smart packaging and brand protection. NTAG 213 TT the new tag tamper functionality which is detecting the status of a tag tamper wire during the startup. In case of an open detect

文件：1.06534 Mbytes 页数：57 Pages

恩XP