NT128D64SH4B1G-75B中文资料etc未分类制造商数据手册PDF规格书

[Nanya Technology Corporation]

描述 Description

NT512D64S8HB0G, NT512D64S8HB1G, NT512D64S8HB1GY, NT512D72S8PB0G, NT256D64SH88B0G, NT256D64SH88B1G, NT256D64SH88B1GY, NT256D72S89B0G and NT128D64SH4B1G are unbuffered 184-Pin Double Data Rate (DDR) Synchronous DRAM Dual In-Line Memory Modules (DIMM). NT512D64S8HB1GY and NT256D64SH88B1GY are packaged using lead free technology.

特性 Features

• 184 Dual In-Line Memory Module (DIMM)

• Unbuffered DDR DIMM based on 256M bit die B device, organized as either 32Mbx8 or 16Mbx16

• Performance:

• Intended for 133, 166 and 200 MHz applications

• Inputs and outputs are SSTL-2 compatible

• VDD = VDDQ = 2.5V ± 0.2V (2.6V ± 0.1V for PC3200)

• SDRAMs have 4 internal banks for concurrent operation

• Differential clock inputs

• Data is read or written on both clock edges

• DRAM DLL aligns DQ and DQS transitions with clock transitions

• Address and control signals are fully synchronous to positive clock edge

• Programmable Operation:

- DIMM CAS Latency: 2, 2.5, 3

- Burst Type: Sequential or Interleave

- Burst Length: 2, 4, 8

- Operation: Burst Read and Write

• Auto Refresh (CBR) and Self Refresh Modes

• Automatic and controlled precharge commands

• 7.8 µs Max. Average Periodic Refresh Interval

• Serial Presence Detect EEPROM

• Gold contacts

• SDRAMs are packaged in TSOP packages

• “Green” packaging – lead free