订购数量 | 价格 |
---|---|
1+ |
首页>NSS40302PDR2G>芯片详情
NSS40302PDR2G_ONSEMI/安森美半导体_两极晶体管 - BJT COMP NPN/PNP LO VCE 40V 6A宏捷佳二部
- 详细信息
- 规格书下载
产品属性
- 类型
描述
- 型号:
NSS40302PDR2G
- 功能描述:
两极晶体管 - BJT COMP NPN/PNP LO VCE 40V 6A
- RoHS:
否
- 制造商:
STMicroelectronics
- 晶体管极性:
PNP 集电极—基极电压
- VCBO:
集电极—发射极最大电压
- VCEO:
- 40 V 发射极 - 基极电压
- VEBO:
- 6 V
- 增益带宽产品fT:
直流集电极/Base Gain hfe
- Min:
100 A
- 安装风格:
SMD/SMT
- 封装/箱体:
PowerFLAT 2 x 2
供应商
相近型号
- NSS40301MDR2G
- NSS4050UW3T2G
- NSS40600CF8
- NSS40301MD
- NSS40301
- NSS40600CF8T1G
- NSS40300UT001G
- NSS40601CF8
- NSS40601CF8T1G
- NSS40300MZ4T3G
- NSS-40DB-415-52-FT
- NSS40300MZ4T1GIC
- NSS-4-10-01
- NSS-4-12-01
- NSS40300MZ4T1G
- NSS-4-14-01
- NSS40300MZ4T
- NSS-4-16-01
- NSS40300MZ4
- NSS-4-2-01
- NSS40300MDR2G
- NSS-4-3-01
- NSS40300MDG
- NSS-4-4-01
- NSS-4-5-01
- NSS40300DDR2GIC
- NSS4532-200-F
- NSS40300DDR2G
- NSS-4-6-01
- NSS40300
- NSS-4-7-01
- NSS4020LT1G
- NSS-4-8-01
- NSS504-012N-CAEG1T
- NSS504022NCHCG1T
- NSS40201LT1G
- NSS506212FCCCG1T
- NSS40201L1TG
- NSS506-212F-CCCG1T
- NSS40201L
- NSS506-212F-ECCG1T
- NSS506-212F-KKKG1T
- NSS40200UW6T1G
- NSS507-212F
- NSS40200UW6=NO1
- NSS507-212F-BAAG1T
- NSS507-212F-GAAG1T
- NSS524-012N-AABG1T
- NSS40200LT1GIC
- NSS5E472J