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NSF040120L3A0中文资料1200 V, 40 mΩ, N-channel SiC MOSFET数据手册Nexperia规格书

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厂商型号

NSF040120L3A0

功能描述

1200 V, 40 mΩ, N-channel SiC MOSFET

制造商

Nexperia Nexperia B.V. All rights reserved

中文名称

安世 安世半导体(中国)有限公司

数据手册

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更新时间

2025-9-17 16:06:00

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NSF040120L3A0规格书详情

描述 Description

The NSF040120L3A0 is a Silicon Carbide based 1200 V power MOSFET in a well-established 3-pin TO-247-3 plastic package for through hole PCB mounting technology. The excellent RDSon temperature stability combined with its fast switching speed makes it a product of choice in high power and high voltage industrial applications like E-vehicle charging infrastructure, photovoltaic inverters and motor drives.

特性 Features

• Excellent RDSon temperature stability
• Very low switching losses
• Fast reverse recovery
• Fast switching speed
• Temperature independent turn-off switching losses
• Very fast and robust intrinsic body diode

应用 Application

• E-vehicle charging infrastructure
• Photovoltaic inverters
• Switch mode power supply
• Uninterruptable power supply
• Motor drives

技术参数

  • 制造商编号

    :NSF040120L3A0

  • 生产厂家

    :Nexperia

  • Qualification

    :Industrial

  • Drain-source breakdown voltage (V)

    :1200

  • Drain-source on-state resistance at 15 V (mΩ)

    :40

  • Drain-source on-state resistance at 18 V (mΩ)

    :31

  • ID [max] (A)

    :65

  • Rth(j-c) [typ] (K/W)

    :0.4

  • Package version

    :SOT429-2

  • Package name

    :TO-247-3L

  • QG(tot) [typ] (nC)

    :95

  • Size (mm)

    :20.95 x 15.94 x 5.02

  • Tj [max] (°C)

    :175

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