NSB9435中文资料PNP 双极数字晶体管 (BRT)数据手册ONSEMI规格书

描述 Description

This digital transistor is designed to replace a single device and its external resistor bias network. The bipolar digital transistor contains a single transistor with a monolithic bias network consisting of two resistors; a series base resistor and a base-emitter resistor. This eliminates these individual components by integrating them into a single device and can reduce both system cost and board space.

特性 Features

• Collector-Emitter Sustaining Voltage - VCEO(sus) = 30 Vdc (Min) @ IC = 10 mAdc
• High DC Current Gain -hFE = 125 (Min) @ IC = 0.8 Adc= 90 (Min) @ IC = 3.0 Adc
• Low Collector-Emitter Saturation Voltage - VCE(sat) = 0.275 Vdc (Max) @ IC = 1.2 Adc= 0.55 Vdc (Max) @ IC = 3.0 Adc
• SOT-223 Surface Mount Packaging
• ESD Rating - Human Body Model: Class 1B - Machine Model: Class B
• Pb-Free Package is Available
• NSV Prefix for Automotive and Other Applications Requiring Unique Site and Control Change Requirements; AECQ101Qualified and PPAP Capable

简介

NSB9435属于分立半导体产品的晶体管-双极（BJT）-单预偏置。由制造生产的NSB9435晶体管 - 双极（BJT）- 单，预偏置预偏置双极晶体管具有内部电阻器，设计用于在未施加输入信号的情况下将器件保持在偏置或工作点附近。晶体管偏置可使晶体管更有效地工作，并产生稳定、无失真的输出信号。预偏置晶体管减少了所需的外部电路元器件数量，从而可降低项目成本。