热释电红外传感器

NS312是将数字智能控制电路与人体探测敏感元都集成在电磁屏蔽罩内的热释电红外传感器。人体探测敏感元将感应到的人体移动信号通过甚高阻抗差分输入电路耦合到数字智能集成电路芯片上，数字智能集成电路将信号转化成ADC数字信号,所有的信号处理都在芯片上完成。 • 数字信号处理\n• 低电压、低功耗，热机时间短\n• 电源抑制比高，抗射频干扰\n• 特别内置红外传感器的二阶巴特沃斯带通滤波器，屏蔽其它频率的输入干扰\n• 稳定性好、有效抑制重复误动作\n• 应用电路简单\n• 定时时间2S输出;

Senba

森霸传感

N-Channel Silicon Junction Field Effect Transistor

Description: The NTE312 is a field effect transistor designed for VHF amplifier and mixer applications. The NTE312 comes in a TO–92 package. Features: • High Power Gain: 10dB Min at 400MHz • High Transconductance: 4000 µmho Min at 400MHz • Low Crss: 1pF Max • High (Yfs) / Ciss

文件：24.4 Kbytes 页数：3 Pages

NTE

TURBOSWITCHTM ULTRA-FAST HIGH VOLTAGE DIODE

DESCRIPTION TURBOSWITCH 1200V drastically cuts losses in all high voltage operationswhich require extremely fast, soft and noise-free power diodes. Due to their optimized switching performances they also highly decrease power losses in any associated switching IGBT or MOSFET in all ”freewheel mo

文件：72.36 Kbytes 页数：8 Pages

STMICROELECTRONICS

意法半导体

TURBOSWITCHTM ULTRA-FAST HIGH VOLTAGE DIODE

DESCRIPTION TURBOSWITCH 1200V drastically cuts losses in all high voltage operationswhich require extremely fast, soft and noise-free power diodes. Due to their optimized switching performances they also highly decrease power losses in any associated switching IGBT or MOSFET in all ”freewheel mo

文件：72.36 Kbytes 页数：8 Pages

STMICROELECTRONICS

意法半导体