This trench Schottky rectifier in the dual flag SO−8 flat lead

package offers designers a unique degree of versatility and design

freedom. The two devices are electrically independent and can be used

separately, as common cathode, as common anode or in series as a

function of board level layout. The exposed pad design provides low

thermal resistance. The clip attach design creates a package with very

efficient die size to board area ratio. While thermal performance is

nearly the same as the DPAK package height and board footprint are

less than half.

Trench Schottky technology provides a superior forward voltage/

leakage tradeoff compared to planar Schottky. The reverse switching

characteristics are extremely stable over temperature minimizing

switching power loss in high frequency applications.

Features

• New Package Provides Capability of Inspection and Probe After

Board Mounting

• Low Forward Voltage Drop

• 175°C Operating Junction Temperature

• NRV Prefix for Automotive and Other Applications Requiring

Unique Site and Control Change Requirements; AEC−Q101

Qualified and PPAP Capable

• These are Pb−Free and Halide−Free Devices

Mechanical Characteristics:

• Case: Epoxy, Molded

• Epoxy Meets Flammability Rating UL 94−0 @ 0.125 in.

• Lead Finish: 100 Matte Sn (Tin)

• Lead and Mounting Surface Temperature for Soldering Purposes:

260°C Max. for 10 Seconds

• Device Meets MSL 1 Requirements

Applications

• Excellent Alternative to DPAK in Space−Constrained Automotive

Applications

• Output Rectification in Switching Power Supplies

• Freewheeling Diode used with Inductive Loads

• Automotive LED Lighting (Interior and Exterior)

NRVTS660MFDT1G属于分立半导体产品 > 二极管 - 整流器 - 阵列。安森美半导体公司制造生产的NRVTS660MFDT1G二极管 - 整流器 - 阵列二极管和整流器阵列系列中的产品可在单个封装内包含两个或多个分立二极管。其特征表述类似于单个分立二极管，并增加了“二极管配置”属性，该属性指示设备中二极管之间任何内部连接的存在情况和特性。请注意，具有全桥配置的阵列被专门排除在外，并列为单独的产品系列。