Schottky Barrier Rectifier Trench-based, High Performance

This Trench Schottky rectifier is high performance device in SO−8 FL package. The lower forward voltage, less leakage current, and small junction capacitance are suitable to high switching frequency high density DC to DC conversion application. Offering higher avalanche energy capability for O

文件：204.91 Kbytes 页数：6 Pages

ONSEMI

安森美半导体

Schottky Barrier Rectifier Trench-based, High Performance

This Trench Schottky rectifier is high performance device in SO−8 FL package. The lower forward voltage, less leakage current, and small junction capacitance are suitable to high switching frequency high density DC to DC conversion application. Offering higher avalanche energy capability for O

文件：204.91 Kbytes 页数：6 Pages

ONSEMI

安森美半导体

30A, 60V High Performance Trench Schottky Rectifier in SO8-FL package

This is high current density trench-based Schottky diode in SO8-FL (5x6) package. It offers lower forward voltage drop, less leakage current, ,smaller junction capacitance, and good avalanche energy capability. Suitable apply to high switching frequency DC to DC conversion applications. • High current density in SO8-FL (5x6) package\n• High power density design\n• Lower forward voltage drop\n• Less conduction loss for higher efficiency requirement\n• Less leakage current\n• High junction temperature operation to prevent thermal runaway\n• Higher avalanche energy\n• Good ruggedness\;

ONSEMI

安森美半导体

Package：8-PowerTDFN，5 引线；包装：卷带（TR） 类别：分立半导体产品 二极管 - 整流器 - 单 描述：60V30A TRENCH SCHOTTKY

ONSEMI

安森美半导体