Surface Mount Schottky Power Rectifier SMB Power Surface Mount Package

These devices employ the Schottky Barrier principle in a metal−to−silicon power rectifier. Features epitaxial construction with oxide passivation and metal overlay contact. Ideally suited for low voltage, high frequency switching power supplies; free wheeling diodes and polarity protection dio

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安森美半导体

Surface Mount Schottky Power Rectifier SMB Power Surface Mount Package

These devices employ the Schottky Barrier principle in a metal−to−silicon power rectifier. Features epitaxial construction with oxide passivation and metal overlay contact. Ideally suited for low voltage, high frequency switching power supplies; free wheeling diodes and polarity protection dio

文件：285.53 Kbytes 页数：6 Pages

ONSEMI

安森美半导体

Schottky Power Rectifier, Surface Mount, 2.0 A, 40 V

The Schottky Rectifier employs the Schottky Barrier principle in a metal-to-silicon power rectifier. It features epitaxial construction with oxide passivation and metal overlay contact. The Schottky Rectifier is ideally suited for low voltage, high frequency switching power supplies, free wheeling d • Compact Package with J-Bend Leads Ideal for Automated Handling\n• Highly Stable Oxide Passivated Junction\n• Low Forward Voltage Drop\n• Epoxy Meets UL94, VO at 1/8\"\n• Cathode Polarity Band\n• Available in 12 mm Tape, 2500 Units per 13\" Reel, Add \"T3\" Suffix to Part Number\n• Marking: 2BL4\n•;

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安森美半导体

Package：DO-214AA，SMB；包装：卷带（TR）剪切带（CT）Digi-Reel® 得捷定制卷带 类别：分立半导体产品 二极管 - 整流器 - 单 描述：DIODE SCHOTTKY 2A 40V SMB2

ONSEMI

安森美半导体