Schottky Power Rectifier, Surface Mount, 2.0 A, 30 V

The Schottky Rectifier employs the Schottky Barrier principle in a metal-to-silicon power rectifier. It features epitaxial construction with oxide passivation and metal overlay contact. The Schottky Rectifier is ideally suited for low voltage, high frequency switching power supplies, free wheeling d • Compact Package with J-Bend Leads Ideal for Automated Handling\n• Highly Stable Oxide Passivated Junction\n• Low Forward Voltage DropMechanical Characteristics:\n• Epoxy Meets UL94, VO at 1/8''\n• Finish: All External Surfaces Corrosion Resistant and Terminal Leads are Readily Solderable\n• Availa;

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安森美半导体

Surface Mount Schottky Power Rectifier

This device employs the Schottky Barrier principle in a metal−to−silicon power rectifier. Features epitaxial construction with oxide passivation and metal overlay contact. Ideally suited for low voltage, high frequency switching power supplies; free wheeling diodes and polarity protection diod

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安森美半导体

Package：DO-214AA，SMB；包装：卷带（TR）剪切带（CT）Digi-Reel® 得捷定制卷带 类别：分立半导体产品 二极管 - 整流器 - 单 描述：DIODE SCHOTTKY 2A 30V SMB2

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安森美半导体

Power Rectifier, Ultra-Fast Recovery, 2 A, 300-400 V

Features • Small Compact Surface Mountable Package with J−Bend Leads • Rectangular Package for Automated Handling • High Temperature Glass Passivated Junction • Low Forward Voltage Drop (0.95 Volts Max @ 2.0 A, TJ = 150°C) • NRVUS and SURS8 Prefixes for Automotive and Other Applications Requ

文件：131.16 Kbytes 页数：6 Pages

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安森美半导体

Power Rectifier, Ultra-Fast Recovery, 2 A, 300-400 V

Ideally suited for high voltage, high frequency rectification, or as free wheeling and protection diodes in surface mount applications where compact size and weight are critical to the system. Features • Small Compact Surface Mountable Package with J−Bend Leads • Rectangular Package for Autom

文件：174.77 Kbytes 页数：6 Pages

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安森美半导体

Power Rectifier, Ultra-Fast Recovery, 2 A, 300-400 V

Features • Small Compact Surface Mountable Package with J−Bend Leads • Rectangular Package for Automated Handling • High Temperature Glass Passivated Junction • Low Forward Voltage Drop (0.95 Volts Max @ 2.0 A, TJ = 150°C) • NRVUS and SURS8 Prefixes for Automotive and Other Applications Requ

文件：131.16 Kbytes 页数：6 Pages

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安森美半导体