Surface Mount Schottky Power Rectifier

This device employs the Schottky Barrier principle in a large area metal−to−silicon power diode. State−of−the−art geometry features epitaxial construction with oxide passivation and metal overlay contact. Ideally suited for low voltage, high frequency rectification, or as free wheeling and pol

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安森美半导体

Surface Mount Schottky Power Rectifier

This device employs the Schottky Barrier principle in a large area metal−to−silicon power diode. State−of−the−art geometry features epitaxial construction with oxide passivation and metal overlay contact. Ideally suited for low voltage, high frequency rectification, or as free wheeling and pol

文件：218.46 Kbytes 页数：5 Pages

ONSEMI

安森美半导体

1.0 A, 30 V, Schottky Power Rectifier, Surface Mount

The Schottky Rectifier employs the Schottky Barrier principle in a large area metal-to-silicon power diode. The Schottky Rectifier's state-of-the-art geometry features epitaxial construction with oxide passivation and metal overlap contact. It is ideally suited for use as rectifiers in low voltage, • Small Compact Surface Mountable Package with J-Bend Leads\n• AEC-Q101 Qualified\n• Rectangular Package for Automated Handling\n• Automotive Grade and PPAP Capable\n• Highly Stable Oxide Passivated Junction\n• Very Low Forward Voltage Drop(0.6 Volts Max @ 1.0 A, TJ = 25C)\n• Excellent Ability to Wi;

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安森美半导体

Package：DO-214AA，SMB；包装：卷带（TR） 类别：分立半导体产品 二极管 - 整流器 - 单 描述：DIODE SCHOTTKY 1A 30V SMB2

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安森美半导体