Switch-mode Power Rectifier

This switch−mode power rectifier uses the Schottky Barrier principle with a platinum barrier metal. This state−of−the−art device has the following features: Features  Low Forward Voltage  175C Operating Junction Temperature  Low Power Loss/High Efficiency  High Surge Capacity  For Au

文件：177.82 Kbytes 页数：7 Pages

ONSEMI

安森美半导体

Switch-mode Power Rectifier

文件：69.68 Kbytes 页数：6 Pages

ONSEMI

安森美半导体

Switch-mode Power Rectifier

This switch−mode power rectifier uses the Schottky Barrier principle with a platinum barrier metal. This state−of−the−art device has the following features: Features  Low Forward Voltage  175C Operating Junction Temperature  Low Power Loss/High Efficiency  High Surge Capacity  For Au

文件：177.82 Kbytes 页数：7 Pages

ONSEMI

安森美半导体

Switch-mode Power Rectifier

文件：69.68 Kbytes 页数：6 Pages

ONSEMI

安森美半导体

Package：TO-263-3，D²Pak（2 引线 + 接片），TO-263AB；包装：管件 类别：分立半导体产品 二极管 - 整流器 - 单 描述：DIODE SCHOTTKY 10A 60V D2PAK-3

ONSEMI

安森美半导体