NRVBA120ET3G分立半导体产品的二极管-整流器-单规格书PDF中文资料

NRVBA120ET3G属于分立半导体产品的二极管-整流器-单。由安森美半导体公司制造生产的NRVBA120ET3G二极管 - 整流器 - 单单整流器二极管系列产品可用于让电流仅沿一个方向流动，并且每个器件封装都恰好实现该功能的一个实例。其他用途的二极管（包括齐纳二极管和可变电容二极管）单独列在各自的产品系列中，每个器件封装中包含多个二极管的产品也是如此。

Employing the Schottky Barrier principle in a metal−to−silicon

power rectifier. Features epitaxial construction with oxide passivation

and metal overlay contact. Ideally suited for low voltage, high

frequency switching power supplies; free wheeling diodes and

polarity protection diodes.

Features

• Compact Package with J−Bend Leads Ideal for Automated Handling

• Highly Stable Oxide Passivated Junction

• Guardring for Over−Voltage Protection

• Optimized for Low Leakage Current

• NRVBA Prefix for Automotive and Other Applications Requiring

Unique Site and Control Change Requirements; AEC−Q101

Qualified and PPAP Capable*

• These Devices are Pb−Free, Halogen Free/BFR Free and are RoHS

Compliant

Mechanical Characteristics:

• Case: Molded Epoxy

• Epoxy Meets UL94, VO at 1/8″

• Weight: 70 mg (approximately)

• Finish: All External Surfaces Corrosion Resistant and Terminal

Leads are Readily Solderable

• Lead and Mounting Surface Temperature for Soldering Purposes:

260°C Max. for 10 Seconds

• Polarity: Polarity Band Indicates Cathode Lead

• Available in 12 mm Tape, 5000 Units per 13 inch Reel

• Device Meets MSL1 Requirements

• ESD Ratings: Machine Model, C (>400 V)

Human Body Model, 3B (>8000 V)

• Marking: B1E2