Schottky Barrier Rectifier Trench-based, High Performance

This Trench Schottky rectifier is high performance device in SO−8 FL package. The lower forward voltage, less leakage current, and small junction capacitance are suitable to high switching frequency high density DC to DC conversion application. Offering higher avalanche energy capability for O

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安森美半导体

Package：8-PowerTDFN，5 引线；包装：卷带（TR） 类别：分立半导体产品 二极管 - 整流器 - 单 描述：120V30A TRENCH SCHOTTKY

ONSEMI

安森美半导体

Schottky Barrier Rectifier Trench-based, High Performance

Features • Lower Forward Voltage Drop • Less Leakage Current in High Temperature • Small Junction Capacitance for High Switching Frequency • Higher Avalanche Energy Capability • 175°C Operating Junction Temperature • Good Alternative Solution of SMC and DPAK Package • Small Footprint − Land

文件：146.98 Kbytes 页数：5 Pages

ONSEMI

安森美半导体

ON
SMA(DO-214

ON

上传：深圳市壹芯创科技有限公司

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SOD-123FL

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上传：深圳市宝芯创电子有限公司