Schottky Barrier Rectifier, Trench-based, High Performance

This Trench Schottky rectifier is a high performance device in a TO−277 package. The lower forward voltage, less leakage current, and small junction capacitance are suitable to high switching frequency high density DC to DC conversion applications. It offers higher avalanche energy capability

文件：149.51 Kbytes 页数：6 Pages

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安森美半导体

Schottky Barrier Rectifier, Trench-based, High Performance

This Trench Schottky rectifier is a high performance device in a TO−277 package. The lower forward voltage, less leakage current, and small junction capacitance are suitable to high switching frequency high density DC to DC conversion applications. It offers higher avalanche energy capability

文件：149.51 Kbytes 页数：6 Pages

ONSEMI

安森美半导体

Schottky Barrier Rectifier, Trench-based, High Performance

This Trench Schottky rectifier is high performance device in 8−FL package. The lower forward voltage, less leakage current, and small junction capacitance are suitable to high switching frequency high density DC to DC conversion application. Offering higher avalanche energy capability for Ori

文件：194.51 Kbytes 页数：6 Pages

ONSEMI

安森美半导体

Schottky Barrier Rectifier, Trench-based, High Performance

This Trench Schottky rectifier is high performance device in 8−FL package. The lower forward voltage, less leakage current, and small junction capacitance are suitable to high switching frequency high density DC to DC conversion application. Offering higher avalanche energy capability for Ori

文件：194.51 Kbytes 页数：6 Pages

ONSEMI

安森美半导体

Schottky Barrier Rectifier, Trench-based, High Performance

This Trench Schottky rectifier is high performance device in 8−FL package. The lower forward voltage, less leakage current, and small junction capacitance are suitable to high switching frequency high density DC to DC conversion application. Offering higher avalanche energy capability for Ori

文件：194.51 Kbytes 页数：6 Pages

ONSEMI

安森美半导体

Schottky Barrier Rectifier, Trench-based, High Performance

This Trench Schottky rectifier is high performance device in 8−FL package. The lower forward voltage, less leakage current, and small junction capacitance are suitable to high switching frequency high density DC to DC conversion application. Offering higher avalanche energy capability for Ori

文件：194.51 Kbytes 页数：6 Pages

ONSEMI

安森美半导体

Schottky Barrier Rectifier, Trench-based, High Performance

This Trench Schottky rectifier is high performance device in 8−FL package. The lower forward voltage, less leakage current, and small junction capacitance are suitable to high switching frequency high density DC to DC conversion application. Offering higher avalanche energy capability for Ori

文件：194.51 Kbytes 页数：6 Pages

ONSEMI

安森美半导体

Very Low Forward Voltage Trench-based Schottky Rectifier

This trench Schottky rectifier in the dual flag SO−8 flat lead package offers designers a unique degree of versatility and design freedom. The two devices are electrically independent and can be used separately, as common cathode, as common anode or in series as a function of board level layou

文件：74.71 Kbytes 页数：5 Pages

ONSEMI

安森美半导体

Very Low Forward Voltage Trench-based Schottky Rectifier

This trench Schottky rectifier in the dual flag SO−8 flat lead package offers designers a unique degree of versatility and design freedom. The two devices are electrically independent and can be used separately, as common cathode, as common anode or in series as a function of board level layou

文件：74.71 Kbytes 页数：5 Pages

ONSEMI

安森美半导体

Very Low Forward Voltage Trench-based Schottky Rectifier

This trench Schottky rectifier in the dual flag SO−8 flat lead package offers designers a unique degree of versatility and design freedom. The two devices are electrically independent and can be used separately, as common cathode, as common anode or in series as a function of board level layou

文件：74.71 Kbytes 页数：5 Pages

ONSEMI

安森美半导体