GaN Amplifier 28 V, 10W, 0.020 - 2.5 GHz

The NPA1007 is a wideband GaN power amplifier optimized for 20 - 2500 MHz operation. This amplifier has been designed for saturated and linear operation with output levels to 10 W (40 dBm) assembled in a lead-free 6 x 5 mm 8-lead PDFN plastic package. The NPA1007 is ideally suited for general purpos ·GaN on Si HEMT D-Mode Amplifier\n·100% RF Tested\n·42% PAE @ 2500 MHz\n·13.5 dB Gain @ 2500 MHz\n·28 V Operation\n·Broadband operation from 20-2500 MHz\n·Suitable for linear and saturated applications\n·Halogen-Free “Green” Mold Compound\n·Lead-Free 6 x 5 mm 8-lead PDFN Package\n·50 O Input;

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Next generation high power RF semiconductor technology

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包装：盒 类别：开发板，套件，编程器 射频评估和开发套件，开发板 描述：EVAL BOARD FOR NPA1007

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Gallium Nitride 28V, 200W RF Power Transistor

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Gallium Nitride 28V, 200W RF Power Transistor

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200W RF Power Transistor

文件：1.01849 Mbytes 页数：7 Pages

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