MOS FIELD EFFECT TRANSISTOR SWITCHING N-CHANNEL POWER MOS FET

DESCRIPTION These products are N-channel MOS Field Effect Transistors designed for high current switching applications. FEATURES • Channel temperature 175 degree rated • Super low on-state resistance RDS(on)1 = 5.2 mΩ MAX. (VGS = 10 V, ID = 44 A) RDS(on)2 = 6.3 mΩ MAX. (VGS = 5.0 V, ID

文件：213.77 Kbytes 页数：10 Pages

NEC

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MOS FIELD EFFECT TRANSISTOR

SWITCHING N-CHANNEL POWER MOS FET FEATURES • Channel temperature 175 degree rated • Super low on-state resistance RDS(on)1 = 5.2 mΩ MAX. (VGS = 10 V, ID = 44 A) RDS(on)2 = 6.3 mΩ MAX. (VGS = 5.0 V, ID = 44 A) RDS(on)3 = 6.8 mΩ MAX. (VGS = 4.5 V, ID = 44 A) • Low input capacitance Ciss =

文件：421.44 Kbytes 页数：12 Pages

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isc N-Channel MOSFET Transistor

FEATURES ·Drain Current -ID= 88A@ TC=25℃ ·Drain Source Voltage -VDSS= 55V(Min) ·Static Drain-Source On-Resistance -RDS(on) = 5.2mΩ(Max)@VGS= 10V DESCRIPTION ·Motor drive, DC-DC converter, power switch and solenoid drive.

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ISC

无锡固电

Product Scout Automotive

文件：5.67799 Mbytes 页数：6 Pages

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MOS FIELD EFFECT TRANSISTOR

SWITCHING N-CHANNEL POWER MOS FET FEATURES • Channel temperature 175 degree rated • Super low on-state resistance RDS(on)1 = 5.2 mΩ MAX. (VGS = 10 V, ID = 44 A) RDS(on)2 = 6.3 mΩ MAX. (VGS = 5.0 V, ID = 44 A) RDS(on)3 = 6.8 mΩ MAX. (VGS = 4.5 V, ID = 44 A) • Low input capacitance Ciss =

文件：421.44 Kbytes 页数：12 Pages

RENESAS

瑞萨

MOS FIELD EFFECT TRANSISTOR SWITCHING N-CHANNEL POWER MOS FET

DESCRIPTION These products are N-channel MOS Field Effect Transistors designed for high current switching applications. FEATURES • Channel temperature 175 degree rated • Super low on-state resistance RDS(on)1 = 5.2 mΩ MAX. (VGS = 10 V, ID = 44 A) RDS(on)2 = 6.3 mΩ MAX. (VGS = 5.0 V, ID

文件：213.77 Kbytes 页数：10 Pages

NEC

瑞萨