NP88N04MHE-S18-AY规格书原装现货瑞萨-114ic电子网

型号	下载订购	功能描述	制造商上传企业	LOGO
NP88N04MHE-S18-AY	文件：227.48 Kbytes Page：10 Pages	MOS FIELD EFFECT TRANSISTOR SWITCHING N-CHANNEL POWER MOSFET DESCRIPTION These products are N-channel MOS Field Effect Transistors designed for high current switching applications. FEATURES • Channel temperature 175 degree rated • Super low on-state resistance RDS(on) = 4.3 mΩ MAX. (VGS = 10 V, ID = 44 A) • Low input capacitance Ciss = 7300 pF 文件：227.48 Kbytes 页数：10 Pages	NEC 瑞萨	NEC
NP88N04MHE-S18-AY	文件：313.85 Kbytes Page：12 Pages	MOS FIELD EFFECT TRANSISTOR SWITCHING N-CHANNEL POWER MOSFET FEATURES • Channel temperature 175 degree rated • Super low on-state resistance RDS(on) = 4.3 mΩ MAX. (VGS = 10 V, ID = 44 A) • Low input capacitance Ciss = 7300 pF TYP. • Built-in gate protection diode 文件：313.85 Kbytes 页数：12 Pages	RENESAS 瑞萨	RENESAS
NP88N04MHE-S18-AYNote1	文件：314.44 Kbytes Page：12 Pages	SWITCHING N-CHANNEL POWER MOS FET 文件：314.44 Kbytes 页数：12 Pages	RENESAS 瑞萨	RENESAS
NP9926ASR	文件：0 bytes Page：0 Pages	SOP-8	南麟上传：深圳市勇康微科技有限公司	南麟
NPA-100B-015A	文件：0 bytes Page：0 Pages	14-SOIC 模块	Amphenol Advanced Sensors 上传：深圳市汇创佳电子科技有限公司	Amphenol Advanced Sensors

更多NP88N04MHE-S18-AY供应商更新时间2025-12-2 11:02:00