MOS FIELD EFFECT TRANSISTOR

SWITCHING N-CHANNEL POWER MOS FET INDUSTRIAL USE DESCRIPTION This product is N-channel MOS Field Effect Transistor designed for high current switching applications. FEATURES ·Channel temperature 175 degree rated · Super low on-state resistance RDS(on)1 = 15 mW MAX. (VGS = 10 V, ID = 40

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MOS FIELD EFFECT TRANSISTOR

SWITCHING N-CHANNEL POWER MOS FET INDUSTRIAL USE FEATURES · Channel Temperature 175 degree rated · Super Low On-state Resistance RDS(on)1 = 13 mW (MAX.) (VGS = 10 V, ID = 40 A) RDS(on)2 = 17 mW (MAX.) (VGS = 5 V, ID = 40 A) · Low Ciss : Ciss = 2360 pF (TYP.) · Built-in Gate protection d

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isc N-Channel MOSFET Transistor

FEATURES ·Drain Current -ID= 80A@ TC=25℃ ·Drain Source Voltage -VDSS= 60V(Min) ·Static Drain-Source On-Resistance -RDS(on) = 13mΩ(Max)@VGS= 10V DESCRIPTION ·Motor drive, DC-DC converter, power switch and solenoid drive.

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无锡固电

MOS FIELD EFFECT TRANSISTOR

SWITCHING N-CHANNEL POWER MOS FET INDUSTRIAL USE DESCRIPTION This product is N-channel MOS Field Effect Transistor designed for high current switching applications. FEATURES ·Channel temperature 175 degree rated · Super low on-state resistance RDS(on)1 = 15 mW MAX. (VGS = 10 V, ID = 40

文件：235.97 Kbytes 页数：10 Pages

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