首页>NP80N055MDG>规格书详情
NP80N055MDG中文资料瑞萨数据手册PDF规格书
相关芯片规格书
更多- NP80N055KHE-E2-AY
- NP80N055ELE-E1-AY
- NP80N055KLE-E2-AY
- NP80N055KLE
- NP80N055ELE-E2-AY
- NP80N055KHE-E1-AY
- NP80N055KLE-E1-AY
- NP80N055KHE
- NP80N055KHE
- NP80N055KLE-E2-AY
- NP80N055KLE
- NP80N055KHE-E1-AYNote1
- NP80N055KHE-E2-AY
- NP80N055KHE-E2-AYNote1
- NP80N055KLE-E1-AY
- NP80N055KLE
- NP80N055KLE-E1-AY
- NP80N055KLE-E2-AY
NP80N055MDG规格书详情
DESCRIPTION
The NP80N055MDG, NP80N055NDG, and NP80N055PDG are N-channel MOS Field Effect Transistors designed for high current switching applications.
FEATURES
• Logic level
• Super low on-state resistance
- NP80N055MDG, NP80N055NDG
RDS(on)1 = 6.9 mΩ MAX. (VGS = 10 V, ID = 40 A)
RDS(on)2 = 11.2 mΩ MAX. (VGS = 4.5 V, ID = 35 A)
- NP80N055PDG
RDS(on)1 = 6.6 mΩ MAX. (VGS = 10 V, ID = 40 A)
RDS(on)2 = 10.9 mΩ MAX. (VGS = 4.5 V, ID = 35 A)
• High current rating
ID(DC) = ±80 A
• Low input capacitance
Ciss = 4600 pF TYP.
• Designed for automotive application and AEC-Q101 qualified
产品属性
- 型号：
NP80N055MDG
- 制造商：
RENESAS
- 制造商全称：
Renesas Technology Corp
- 功能描述：
MOS FIELD EFFECT TRANSISTOR
| 供应商 | 型号 | 品牌 | 批号 | 封装 | 库存 | 备注 | 价格 |
|---|---|---|---|---|---|---|---|
R |
24+ |
T0-220 |
80000 |
只做自己库存,全新原装进口正品假一赔百,可开13%增 |
询价 | ||
RENESAS/瑞萨 |
22+ |
TO-220 |
12500 |
瑞萨全系列在售,终端可出样品 |
询价 | ||
NEC |
24+ |
TO-262 |
3000 |
原装现货假一赔十 |
询价 | ||
R |
25+ |
TO-TO-220 |
12300 |
独立分销商 公司只做原装 诚心经营 免费试样正品保证 |
询价 | ||
RENESAS/瑞萨 |
22+ |
TO-220 |
9000 |
专业配单,原装正品假一罚十,代理渠道价格优 |
询价 | ||
VB |
21+ |
TO-220 |
10000 |
原装现货假一罚十 |
询价 | ||
NEC |
23+ |
TO-220 |
33000 |
原厂授权一级代理,专业海外优势订货,价格优势、品种 |
询价 | ||
RENESAS/瑞萨 |
2022+ |
TO-220 |
30000 |
进口原装现货供应,原装 假一罚十 |
询价 | ||
RENESAS/瑞萨 |
20+ |
TO-220 |
32500 |
现货很近!原厂很远!只做原装 |
询价 | ||
Renesas Electronics America |
2022+ |
TO-220-3 |
38550 |
全新原装 支持表配单 中国著名电子元器件独立分销 |
询价 |
