NP48N055DHE-S12-AY数据手册批发采购瑞萨-114ic电子网

型号	下载订购	功能描述	制造商上传企业	LOGO
NP48N055DHE-S12-AY	文件：305.15 Kbytes Page：12 Pages	MOS FIELD EFFECT TRANSISTOR SWITCHING N-CHANNEL POWER MOS FET FEATURES • Channel temperature 175 degree rated • Super low on-state resistance RDS(on) = 17 mΩ MAX. (VGS = 10 V, ID = 24 A) • Low input capacitance Ciss = 1600 pF TYP. • Built-in gate protection diode 文件：305.15 Kbytes 页数：12 Pages	RENESAS 瑞萨	RENESAS
NP48N055DHE-S12-AY	文件：218.63 Kbytes Page：10 Pages	MOS FIELD EFFECT TRANSISTOR SWITCHING N-CHANNEL POWER MOS FET DESCRIPTION These products are N-channel MOS Field Effect Transistors designed for high current switching applications. FEATURES • Channel temperature 175 degree rated • Super low on-state resistance RDS(on) = 17 mΩ MAX. (VGS = 10 V, ID = 24 A) • Low input capacitance Ciss = 1600 pF T 文件：218.63 Kbytes 页数：10 Pages	NEC 瑞萨	NEC
NP48N055DHE-S12-AYNote1,	文件：305.74 Kbytes Page：12 Pages	SWITCHING N-CHANNEL POWER MOS FET 文件：305.74 Kbytes 页数：12 Pages	RENESAS 瑞萨	RENESAS
NP9926ASR	文件：0 bytes Page：0 Pages	南麟 SOP-8	南麟上传：深圳市勇康微科技有限公司	南麟
NPA-100B-015A	文件：0 bytes Page：0 Pages	Amphenol Advanced Sensors 14-SOIC 模块	Amphenol Advanced Sensors 上传：深圳市汇创佳电子科技有限公司	Amphenol Advanced Sensors

更多NP48N055DHE-S12-AY供应商更新时间2025-10-5 10:02:00