1,048,576-Bit (128k x 8) Low Voltage EPROM

General Description The NM27LV010 is a high performance Low Voltage Electrically Programmable Read Only Memory. It is manufactured using Fairchild’s AMG™ EPROM technology. This technology allows the part to operate at speeds as fast as 200 ns. Features ■ 3.0V to 3.6V operation ■ 200 ns access

文件：100.81 Kbytes 页数：10 Pages

Fairchild

仙童半导体

1,048,576-Bit (128k x 8) Low Voltage EPROM

ONSEMI

安森美半导体

1,048,576-Bit (128k x 8) Low Voltage EPROM

General Description The NM27LV010 is a high performance Low Voltage Electrically Programmable Read Only Memory. It is manufactured using Fairchild’s AMG™ EPROM technology. This technology allows the part to operate at speeds as fast as 200 ns. Features ■ 3.0V to 3.6V operation ■ 200 ns access

文件：100.81 Kbytes 页数：10 Pages

Fairchild

仙童半导体

1,048,576-Bit (128k x 8) Low Voltage EPROM

General Description The NM27LV010 is a high performance Low Voltage Electrically Programmable Read Only Memory. It is manufactured using Fairchild’s AMG™ EPROM technology. This technology allows the part to operate at speeds as fast as 200 ns. Features ■ 3.0V to 3.6V operation ■ 200 ns access

文件：100.81 Kbytes 页数：10 Pages

Fairchild

仙童半导体

1,048,576-Bit (128k x 8) Low Voltage EPROM

General Description The NM27LV010 is a high performance Low Voltage Electrically Programmable Read Only Memory. It is manufactured using Fairchild’s AMG™ EPROM technology. This technology allows the part to operate at speeds as fast as 200 ns. Features ■ 3.0V to 3.6V operation ■ 200 ns access

文件：100.81 Kbytes 页数：10 Pages

Fairchild

仙童半导体

1,048,576-Bit (128k x 8) Low Voltage EPROM

General Description The NM27LV010 is a high performance Low Voltage Electrically Programmable Read Only Memory. It is manufactured using Fairchild’s AMG™ EPROM technology. This technology allows the part to operate at speeds as fast as 200 ns. Features ■ 3.0V to 3.6V operation ■ 200 ns access

文件：100.81 Kbytes 页数：10 Pages

Fairchild

仙童半导体

1,048,576-Bit (128k x 8) Low Voltage EPROM

General Description The NM27LV010 is a high performance Low Voltage Electrically Programmable Read Only Memory. It is manufactured using Fairchild’s AMG™ EPROM technology. This technology allows the part to operate at speeds as fast as 200 ns. Features ■ 3.0V to 3.6V operation ■ 200 ns access

文件：100.81 Kbytes 页数：10 Pages

Fairchild

仙童半导体

1,048,576-Bit (128k x 8) Low Voltage EPROM

General Description The NM27LV010 is a high performance Low Voltage Electrically Programmable Read Only Memory. It is manufactured using Fairchild’s AMG™ EPROM technology. This technology allows the part to operate at speeds as fast as 200 ns. Features ■ 3.0V to 3.6V operation ■ 200 ns access

文件：100.81 Kbytes 页数：10 Pages

Fairchild

仙童半导体

1,048,576-Bit (128k x 8) Low Voltage EPROM

General Description The NM27LV010 is a high performance Low Voltage Electrically Programmable Read Only Memory. It is manufactured using Fairchild’s AMG™ EPROM technology. This technology allows the part to operate at speeds as fast as 200 ns. Features ■ 3.0V to 3.6V operation ■ 200 ns access

文件：100.81 Kbytes 页数：10 Pages

Fairchild

仙童半导体

1,048,576-Bit (128k x 8) Low Voltage EPROM

General Description The NM27LV010 is a high performance Low Voltage Electrically Programmable Read Only Memory. It is manufactured using Fairchild’s AMG™ EPROM technology. This technology allows the part to operate at speeds as fast as 200 ns. Features ■ 3.0V to 3.6V operation ■ 200 ns access

文件：100.81 Kbytes 页数：10 Pages

Fairchild

仙童半导体