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零件编号	下载&订购	功能描述	制造商&上传企业	LOGO
FXL6408UMX	文件：805.83 Kbytes Page：17 Pages	FullyConfigurable8-BitI2C-ControlledGPIOExpander	ONSEMION Semiconductor 安森美半导体安森美半导体公司	ONSEMI
HD-6408	文件：507.83 Kbytes Page：12 Pages	CMOSAsynchronousSerialManchesterAdapter(ASMA) TheHD-6408isaCMOS/LSIManchesterEncoder/Decoderforcreatingaveryhighspeedasynchronousserialdatabus.TheEncoderconvertsserialNRZdata(typicallyfromashiftregister)toManchesterIIencodeddata,addingasyncpulseandparitybit.TheDecoderrecognizesthissyncpulseandide	RENESASRenesas Electronics America 瑞萨瑞萨科技有限公司	RENESAS
HD-6408	文件：232.81 Kbytes Page：12 Pages	CMOSAsynchronousSerialManchesterAdapter TheHD-6408isaCMOS/LSIManchesterEncoder/Decoder forcreatingaveryhighspeedasynchronousserialdatabus. TheEncoderconvertsserialNRZdata(typicallyfromashift register)toManchesterIIencodeddata,addingasyncpulse andparitybit.TheDecoderrecognizesthissyncpulseand	IntersilIntersil Corporation 瑞萨电子瑞萨电子株式会社	Intersil
HD-6408	文件：237.66 Kbytes Page：11 Pages	CMOSAsynchronousSerialManchesterAdapter(ASMA)	IntersilIntersil Corporation 瑞萨电子瑞萨电子株式会社	Intersil
HD-6408	文件：57.95 Kbytes Page：11 Pages	CMOSAsynchronousSerialManchesterAdapter(ASMA) TheHD-6408isaCMOS/LSIManchesterEncoder/Decoderforcreatingaveryhighspeedasynchronousserialdatabus.TheEncoderconvertsserialNRZdata(typicallyfromashiftregister)toManchesterIIencodeddata,addingasyncpulseandparitybit.TheDecoderrecognizesthissyncpulseandide	IntersilIntersil Corporation 瑞萨电子瑞萨电子株式会社	Intersil
HM6408	文件：1.1278 Mbytes Page：7 Pages	N-ChannelEnhancementModePowerMOSFET Description TheHM6408usesadvancedtrenchtechnologytoprovideexcellentRDS(ON),lowgatechargeandoperationwithgatevoltagesaslowas2.5V.Thisdeviceissuitableforuseasabatteryprotectionorinotherswitchingapplication. Features ●VDS=20V,ID=5.5A RDS(ON)	HMSEMIShenzhen Huazhimei Semiconductor Co., Ltd 华之美半导体深圳市华之美半导体有限公司	HMSEMI
HX6408	文件：167.39 Kbytes Page：11 Pages	512kx8STATICRAM The512Kx8RadiationHardenedStaticRAMisahighperformance524,288wordx8-bitstaticrandomaccessmemorywithoptionalindustry-standardfunctionality.ItisfabricatedwithHoneywell’sradiationhardenedSiliconOnInsulator(SOI)technology,andisdesignedforuseinlowvoltagesystem	HoneywellHoneywell Sensing and Productivity Solutions 霍尼韦尔霍尼韦尔国际	Honeywell
HX6408-EFM	文件：167.39 Kbytes Page：11 Pages	512kx8STATICRAM The512Kx8RadiationHardenedStaticRAMisahighperformance524,288wordx8-bitstaticrandomaccessmemorywithoptionalindustry-standardfunctionality.ItisfabricatedwithHoneywell’sradiationhardenedSiliconOnInsulator(SOI)technology,andisdesignedforuseinlowvoltagesystem	HoneywellHoneywell Sensing and Productivity Solutions 霍尼韦尔霍尼韦尔国际	Honeywell
HX6408-EFN	文件：167.39 Kbytes Page：11 Pages	512kx8STATICRAM The512Kx8RadiationHardenedStaticRAMisahighperformance524,288wordx8-bitstaticrandomaccessmemorywithoptionalindustry-standardfunctionality.ItisfabricatedwithHoneywell’sradiationhardenedSiliconOnInsulator(SOI)technology,andisdesignedforuseinlowvoltagesystem	HoneywellHoneywell Sensing and Productivity Solutions 霍尼韦尔霍尼韦尔国际	Honeywell
HX6408-EHM	文件：167.39 Kbytes Page：11 Pages	512kx8STATICRAM The512Kx8RadiationHardenedStaticRAMisahighperformance524,288wordx8-bitstaticrandomaccessmemorywithoptionalindustry-standardfunctionality.ItisfabricatedwithHoneywell’sradiationhardenedSiliconOnInsulator(SOI)technology,andisdesignedforuseinlowvoltagesystem	HoneywellHoneywell Sensing and Productivity Solutions 霍尼韦尔霍尼韦尔国际	Honeywell
HX6408-EHN	文件：167.39 Kbytes Page：11 Pages	512kx8STATICRAM The512Kx8RadiationHardenedStaticRAMisahighperformance524,288wordx8-bitstaticrandomaccessmemorywithoptionalindustry-standardfunctionality.ItisfabricatedwithHoneywell’sradiationhardenedSiliconOnInsulator(SOI)technology,andisdesignedforuseinlowvoltagesystem	HoneywellHoneywell Sensing and Productivity Solutions 霍尼韦尔霍尼韦尔国际	Honeywell
HX6408-ENM	文件：167.39 Kbytes Page：11 Pages	512kx8STATICRAM The512Kx8RadiationHardenedStaticRAMisahighperformance524,288wordx8-bitstaticrandomaccessmemorywithoptionalindustry-standardfunctionality.ItisfabricatedwithHoneywell’sradiationhardenedSiliconOnInsulator(SOI)technology,andisdesignedforuseinlowvoltagesystem	HoneywellHoneywell Sensing and Productivity Solutions 霍尼韦尔霍尼韦尔国际	Honeywell
HX6408-ENN	文件：167.39 Kbytes Page：11 Pages	512kx8STATICRAM The512Kx8RadiationHardenedStaticRAMisahighperformance524,288wordx8-bitstaticrandomaccessmemorywithoptionalindustry-standardfunctionality.ItisfabricatedwithHoneywell’sradiationhardenedSiliconOnInsulator(SOI)technology,andisdesignedforuseinlowvoltagesystem	HoneywellHoneywell Sensing and Productivity Solutions 霍尼韦尔霍尼韦尔国际	Honeywell
HX6408-ERM	文件：167.39 Kbytes Page：11 Pages	512kx8STATICRAM The512Kx8RadiationHardenedStaticRAMisahighperformance524,288wordx8-bitstaticrandomaccessmemorywithoptionalindustry-standardfunctionality.ItisfabricatedwithHoneywell’sradiationhardenedSiliconOnInsulator(SOI)technology,andisdesignedforuseinlowvoltagesystem	HoneywellHoneywell Sensing and Productivity Solutions 霍尼韦尔霍尼韦尔国际	Honeywell
HX6408-ERN	文件：167.39 Kbytes Page：11 Pages	512kx8STATICRAM The512Kx8RadiationHardenedStaticRAMisahighperformance524,288wordx8-bitstaticrandomaccessmemorywithoptionalindustry-standardfunctionality.ItisfabricatedwithHoneywell’sradiationhardenedSiliconOnInsulator(SOI)technology,andisdesignedforuseinlowvoltagesystem	HoneywellHoneywell Sensing and Productivity Solutions 霍尼韦尔霍尼韦尔国际	Honeywell
HX6408KEFM	文件：167.39 Kbytes Page：11 Pages	512kx8STATICRAM The512Kx8RadiationHardenedStaticRAMisahighperformance524,288wordx8-bitstaticrandomaccessmemorywithoptionalindustry-standardfunctionality.ItisfabricatedwithHoneywell’sradiationhardenedSiliconOnInsulator(SOI)technology,andisdesignedforuseinlowvoltagesystem	HoneywellHoneywell Sensing and Productivity Solutions 霍尼韦尔霍尼韦尔国际	Honeywell
HX6408KEFN	文件：167.39 Kbytes Page：11 Pages	512kx8STATICRAM The512Kx8RadiationHardenedStaticRAMisahighperformance524,288wordx8-bitstaticrandomaccessmemorywithoptionalindustry-standardfunctionality.ItisfabricatedwithHoneywell’sradiationhardenedSiliconOnInsulator(SOI)technology,andisdesignedforuseinlowvoltagesystem	HoneywellHoneywell Sensing and Productivity Solutions 霍尼韦尔霍尼韦尔国际	Honeywell
HX6408KEHM	文件：167.39 Kbytes Page：11 Pages	512kx8STATICRAM The512Kx8RadiationHardenedStaticRAMisahighperformance524,288wordx8-bitstaticrandomaccessmemorywithoptionalindustry-standardfunctionality.ItisfabricatedwithHoneywell’sradiationhardenedSiliconOnInsulator(SOI)technology,andisdesignedforuseinlowvoltagesystem	HoneywellHoneywell Sensing and Productivity Solutions 霍尼韦尔霍尼韦尔国际	Honeywell
HX6408KEHN	文件：167.39 Kbytes Page：11 Pages	512kx8STATICRAM The512Kx8RadiationHardenedStaticRAMisahighperformance524,288wordx8-bitstaticrandomaccessmemorywithoptionalindustry-standardfunctionality.ItisfabricatedwithHoneywell’sradiationhardenedSiliconOnInsulator(SOI)technology,andisdesignedforuseinlowvoltagesystem	HoneywellHoneywell Sensing and Productivity Solutions 霍尼韦尔霍尼韦尔国际	Honeywell
HX6408KENM	文件：167.39 Kbytes Page：11 Pages	512kx8STATICRAM The512Kx8RadiationHardenedStaticRAMisahighperformance524,288wordx8-bitstaticrandomaccessmemorywithoptionalindustry-standardfunctionality.ItisfabricatedwithHoneywell’sradiationhardenedSiliconOnInsulator(SOI)technology,andisdesignedforuseinlowvoltagesystem	HoneywellHoneywell Sensing and Productivity Solutions 霍尼韦尔霍尼韦尔国际	Honeywell

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详细参数

型号：
NJU6408
制造商：
NJRC
制造商全称：
New Japan Radio
功能描述：
8-CHARACTER 2-LINE DOT MATRIX LCD CONTROLLER DRIVER WITH EXTENSION FUNCTION

供应商	型号	品牌	批号	封装	库存	备注	价格
深圳市羿芯诚电子有限公司	NJU6408BF	JRC	20+	QFP	2860	原厂原装正品价格优惠公司现货欢迎查询	询价
深圳市一线半导体有限公司	NJU6408BF	JRC	95		3000	公司存货	询价
深圳市博浩通科技有限公司	NJU6408BF	JRC	23+	QFP80	8890	价格优势/原装现货/客户至上/欢迎广大客户来电查询	询价
齐创科技(上海,北京,青岛)有限公司	NJU6408BF	JRC	23+	DIP	5000	原装正品,假一罚十	询价
深圳市鹏和科技有限公司	NJU6408BF	JRC	24+	QFP	5000	全现原装公司现货	询价
上海鑫科润电子科技有限公司	NJU6408BF	JRC	97+	QFP/80	700	原装现货海量库存欢迎咨询	询价
深圳市华斯顿科技有限公司	NJU6408BF	JRC	22+23+	QFP	37991	绝对原装正品全新进口深圳现货	询价
深圳市近平电子有限公司	NJU6408BF	JRC	6000	面议	19	SSMD	询价
深圳市盈宏半导体科技有限公司	NJU6408BF	JRC	06+	QFP	330	库存刚更新加微13425146986	询价
深圳赋能华科电子有限公司	NJU6408BF	JRC	22+	QFP	500	样品可出,优势库存欢迎实单	询价

更多NJU6408供应商更新时间2024-6-13 8:00:00

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